MX0912B251Y

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See Product Specifications

Mfr. #:

MX0912B251Y

Mfr.:

Rochester Electronics, LLC

Описание:

MX0912B251Y - NPN SILICON RF POW

Упаковка:

Bulk

Datasheet:

MX0912B251Y Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	MX0912B251Y
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - Bipolar (BJT) - RF
Производитель:	Rochester Electronics, LLC
Упаковка:	Bulk
Product Status:	ec30c235d0eb792797af1aa1d11759a7
Transistor Type:	e3d31b6d6c1368232482785f7e6d9bd1
Voltage - Collector Emitter Breakdown (Max):	86ca63bb9efbaa94bcb05b428144623c
Frequency - Transition:	3508579d5250c2010b2576df6e917833
Noise Figure (dB Typ @ f):	336d5ebc5436534e61d16e63ddfca327
Gain:	39eb0587c08263be4b2732019d6eabb0
Power - Max:	765616741805d6d2067927e8a13f6b28
DC Current Gain (hFE) (Min) @ Ic, Vce:	336d5ebc5436534e61d16e63ddfca327
Current - Collector (Ic) (Max):	d42c1d2f3b3005c2f924b534d0bfb0e7
Operating Temperature:	336d5ebc5436534e61d16e63ddfca327
Mounting Type:	678457b2fd6f368ccd41b6654ad866df
Package / Case:	c4d97875c7411e70b1c6267f3970e3e1
Supplier Device Package:	857048e7a128f033945c89ac6d6662d6

In Stock: 777

Stock:

777 Can Ship Immediately