BR24T02FVT-WE2

BR24T02FVT-WE2

Images are for reference only
See Product Specifications

BR24T02FVT-WE2
Описание:
IC EEPROM 2KBIT I2C 8TSSOPB
Упаковка:
Tape & Reel (TR)
Datasheet:
BR24T02FVT-WE2 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:BR24T02FVT-WE2
Категория:Integrated Circuits (ICs)
Подкатегория:Memory
Производитель:Rohm Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Memory Type:3efd259d37c0879b70a60a5aa4169f1b
Memory Format:32b682b454fbc10d327ebcbcdb0b1936
Technology:32b682b454fbc10d327ebcbcdb0b1936
Memory Size:996615f5c18c664d05a7d2717b817461
Memory Interface:66e067bc40cb05ceca6f9c9c4986e140
Clock Frequency:288a65508da0d91982a2e633666eb717
Write Cycle Time - Word, Page:e23ca5442c19130b758a6427d9158af0
Access Time:336d5ebc5436534e61d16e63ddfca327
Voltage - Supply:2b65650e94235d098f685f688d8a7647
Operating Temperature:a0642ad5458e4dac9a3b9b1a9a5604fd
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:e03a7a6d310a992f91d9ce6fc79d28ea
Supplier Device Package:1e166d3a58d3cbcbf58923697c8ee28f
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
W25N02KVZEIU TR
W25N02KVZEIU TR
Winbond Electronics
IC FLASH 2GBIT SPI 8WSON
71V65603S133BGGI8
71V65603S133BGGI8
Renesas Electronics America Inc
IC SRAM 9MBIT PARALLEL 119PBGA
MT28EW512ABA1LJS-0SIT
MT28EW512ABA1LJS-0SIT
Micron Technology Inc.
IC FLASH 512MBIT PARALLEL 56TSOP
AT25010N-10SC
AT25010N-10SC
Microchip Technology
IC EEPROM 1KBIT SPI 3MHZ 8SOIC
AT28HC256F-90JA
AT28HC256F-90JA
Microchip Technology
IC EEPROM 256KBIT PAR 32PLCC
MX25U6435EMI-10G
MX25U6435EMI-10G
Macronix
IC FLASH 64MBIT SPI/QUAD 16SOP
MTFC16GLXAM-WT TR
MTFC16GLXAM-WT TR
Micron Technology Inc.
IC FLASH 128GBIT MMC 153VFBGA
MT48LC16M16A2B4-6A AAT:G TR
MT48LC16M16A2B4-6A AAT:G TR
Micron Technology Inc.
IC DRAM 256MBIT PARALLEL 54VFBGA
DS28E01P-W0N+1T
DS28E01P-W0N+1T
Analog Devices Inc./Maxim Integrated
IC EEPROM
W25N512GWPIR TR
W25N512GWPIR TR
Winbond Electronics
512MB SERIAL NAND FLASH, 1.8V
MT53E512M32D2NP-053 RS WT:G
MT53E512M32D2NP-053 RS WT:G
Micron Technology Inc.
DRAM LPDDR4 16G 512MX32 FBGA DDP
CY7C1061G30-10BV1XE
CY7C1061G30-10BV1XE
Infineon Technologies
IC SRAM 16MBIT PARALLEL 48VFBGA
Вас также может заинтересовать
NSE-1200-10
NSE-1200-10
Nightshade Electronics
NSE-1200-10
TMK021CG8R2BK-W
TMK021CG8R2BK-W
Taiyo Yuden
CAPACITOR CERAMIC 008004
0137500000
0137500000
Weidmüller
FUSE E14 4A 380VAC NEOZED
ACT96MJ37SB-6149
ACT96MJ37SB-6149
TE Connectivity Deutsch Connectors
ACT96MJ37SB-6149
DL60R20-25S7-6106-LC
DL60R20-25S7-6106-LC
TE Connectivity Deutsch Connectors
CONN RCPT HSG FMALE 25POS PNL MT
DTS24T11-99PD3028
DTS24T11-99PD3028
TE Connectivity Deutsch Connectors
JAM NUT RECEPTACLE
ACT94WJ24SB-3025
ACT94WJ24SB-3025
TE Connectivity Deutsch Connectors
CONN RCPT FMALE 24POS GOLD CRIMP
SG-8002CA 4.8000M-PCBL3
SG-8002CA 4.8000M-PCBL3
EPSON
XTAL OSC XO 4.8000MHZ CMOS SMD
RQ5E040AJTCL
RQ5E040AJTCL
Rohm Semiconductor
MOSFET N-CH 30V 4A TSMT3
HK10056N8H-TV
HK10056N8H-TV
Taiyo Yuden
FIXED INDUCTOR SMD
LLQBA251818T2R2M
LLQBA251818T2R2M
Taiyo Yuden
FIXED IND 2.2UH 340MA 90MOHM SMD
ETD49/25/16-3C97
ETD49/25/16-3C97
Ferroxcube
FERRITE CORE