BSM180C12P2E202

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Mfr. #:

BSM180C12P2E202

Mfr.:

Rohm Semiconductor

Описание:

SICFET N-CH 1200V 204A MODULE

Упаковка:

Tray

Datasheet:

BSM180C12P2E202 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	BSM180C12P2E202
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Rohm Semiconductor
Упаковка:	Tray
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	ed9a2411b032b5ad765b9d5f6b1bc8e1
Drain to Source Voltage (Vdss):	edca1d2343e4e5615ce51a879f622a76
Current - Continuous Drain (Id) @ 25°C:	74b321e9df120d1ecb26943ba4856445
Drive Voltage (Max Rds On, Min Rds On):	336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:	336d5ebc5436534e61d16e63ddfca327
Vgs(th) (Max) @ Id:	411a5998852632c0ccb47d6aa4e99545
Gate Charge (Qg) (Max) @ Vgs:	336d5ebc5436534e61d16e63ddfca327
Vgs (Max):	d60a796aeb39730c44230be0ab3c0527
Input Capacitance (Ciss) (Max) @ Vds:	bcd13485b825f5dfbc7ca06ddac34a87
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	53b386aa4ac68596c67df530b03469be
Operating Temperature:	dfb4ad46e1ac805451b8f397e97630b4
Mounting Type:	678457b2fd6f368ccd41b6654ad866df
Supplier Device Package:	e55f75a29310d7b60f7ac1d390c8ae42
Package / Case:	e55f75a29310d7b60f7ac1d390c8ae42

In Stock: 0

Stock:

0 Can Ship Immediately