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See Product Specifications
| номер части: | IMB4AT110 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Производитель: | Rohm Semiconductor |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | 3c4f188edba860ebd19850af474c12fd |
| Current - Collector (Ic) (Max): | 8fa6a3a617ed852de22fab67a97483fa |
| Voltage - Collector Emitter Breakdown (Max): | ef3fbc276cb9f08e57f243ec2875d986 |
| Resistor - Base (R1): | df689bcc7f60ca8585c12872d7bd237a |
| Resistor - Emitter Base (R2): | 336d5ebc5436534e61d16e63ddfca327 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 66099a91b91d1e56378f840a3ac515d7 |
| Vce Saturation (Max) @ Ib, Ic: | f40c4f223c4f52a45399952c757f99e1 |
| Current - Collector Cutoff (Max): | 336d5ebc5436534e61d16e63ddfca327 |
| Frequency - Transition: | ed54b48b4b98a53ca5d3d8bed2512fbd |
| Power - Max: | 2940c137f79e4ef421e163569997f029 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | ba9086440b12ae203cf29e9ec113b2c0 |
| Supplier Device Package: | 8539e38c720faf9304cdaed100a66d84 |
