R6009END3TL1

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See Product Specifications

Mfr. #:

R6009END3TL1

Mfr.:

Rohm Semiconductor

Описание:

MOSFET N-CH 600V 9A TO252

Упаковка:

Tape & Reel (TR)

Datasheet:

R6009END3TL1 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	R6009END3TL1
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Rohm Semiconductor
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	4273bf5e13cf29d12c53ae77b787e55d
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	2d46188fafe31fc22e09a4701936f380
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	972213b4ff98b73fb67879667322f035
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	04a3d44916ff36d6cf28ba45f3819c47
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	570b43b1a943317386ae8969270b009f
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	26334f21813abf4634f508e2476262a0
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95