R6009ENXC7G

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Mfr. #:

R6009ENXC7G

Mfr.:

Rohm Semiconductor

Описание:

600V 9A TO-220FM, LOW-NOISE POWE

Упаковка:

Tube

Datasheet:

R6009ENXC7G Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	R6009ENXC7G
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Rohm Semiconductor
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	8eb8529018c5d32af4812ca4c4cabfa9
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	2d46188fafe31fc22e09a4701936f380
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	972213b4ff98b73fb67879667322f035
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	04a3d44916ff36d6cf28ba45f3819c47
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	af93033d5a58ca334eaba06234e57460
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	1e664ef58e5b8603658589b6b8d03ef7
Package / Case:	a02e0d1a928de3366340ceae094aecd8

In Stock: 1000

Stock:

1000 Can Ship Immediately