R6530ENXC7G

R6530ENXC7G

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R6530ENXC7G
Описание:
650V 30A TO-220FM, LOW-NOISE POW
Упаковка:
Tube
Datasheet:
R6530ENXC7G Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:R6530ENXC7G
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Rohm Semiconductor
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:0563dec0a7488306d232b9f76bb0fb19
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:500a1bb2961793b57e4e463a6e8a0603
Vgs(th) (Max) @ Id:c8580b96b00267f3d0056f2ffa349e8a
Gate Charge (Qg) (Max) @ Vgs:023f224d6b8afb36d9df8bc446b12e5a
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:e38b89dad0ed18375bf4ad01fdc19bf7
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):5a26ea5f8040c9803e9e8d564f2a21b9
Operating Temperature:a05f788eae82918882d3b91ce435570b
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:1e664ef58e5b8603658589b6b8d03ef7
Package / Case:a02e0d1a928de3366340ceae094aecd8
In Stock: 1000
Stock:
1000 Can Ship Immediately
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