R6535ENZ4C13

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See Product Specifications

Mfr. #:

R6535ENZ4C13

Mfr.:

Rohm Semiconductor

Описание:

650V 35A TO-247, LOW-NOISE POWER

Упаковка:

Tube

Datasheet:

R6535ENZ4C13 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	R6535ENZ4C13
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Rohm Semiconductor
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:	822fa9074467f53dd633c6786e269596
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	a2b37d29d0c45bf0862c4ab4539c5d90
Vgs(th) (Max) @ Id:	6eaf23169ef74f07327874a792c21f56
Gate Charge (Qg) (Max) @ Vgs:	dd1e01f8f7a1df3b99f0374250edc868
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	dfb5652f397e159b7118daf37b2c8df1
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	a812d75c6d1deeb123372d7f2519dbf8
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	c880d0965f4ba373153f66b9b701ec54
Package / Case:	748a8539a6c3c7dbdb455218c72fac40