R8010ANX

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See Product Specifications

Mfr. #:

R8010ANX

Mfr.:

Rohm Semiconductor

Описание:

MOSFET N-CH 800V 10A TO220FM

Упаковка:

Bulk

Datasheet:

R8010ANX Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	R8010ANX
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Rohm Semiconductor
Упаковка:	Bulk
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	faca79d8bea430c6302af6f2e2f59d12
Current - Continuous Drain (Id) @ 25°C:	4cbc835c709aa2e29cefbdf46fa4c9f1
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	2318e9d261d3eb39fd123578cce6e6c3
Vgs(th) (Max) @ Id:	a8d999915b067e20670485e9908f378a
Gate Charge (Qg) (Max) @ Vgs:	a65a653621dd95f8547d805115f985c8
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	ad7933834ba9d1ad7740d761b5ad2168
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	2aa0e4b96ebad01dba346ba12d8321e6
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	1e664ef58e5b8603658589b6b8d03ef7
Package / Case:	a02e0d1a928de3366340ceae094aecd8