RD3G01BATTL1

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Mfr. #:

RD3G01BATTL1

Mfr.:

Rohm Semiconductor

Описание:

PCH -40V -15A POWER MOSFET - RD3

Упаковка:

Tape & Reel (TR)

Datasheet:

RD3G01BATTL1 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	RD3G01BATTL1
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Rohm Semiconductor
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	628cbc3e45d5bacb32414a526acf56ef
Current - Continuous Drain (Id) @ 25°C:	d93d6ce17957df3133849cc93b547875
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	1059fa832bb797b91d4d75ecc502ae63
Vgs(th) (Max) @ Id:	a7c6093f80ca0dfc858bc53da7afe406
Gate Charge (Qg) (Max) @ Vgs:	fd3b9960b1b3b76e4a5b875c2b1e8fc2
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	499922094e6b52ddbefd54af84be38ea
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	79f5778ca5c863c6b975a6620bde53d7
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	26334f21813abf4634f508e2476262a0
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95

In Stock: 0

Stock:

0 Can Ship Immediately