RD3G07BATTL1

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See Product Specifications

Mfr. #:

RD3G07BATTL1

Mfr.:

Rohm Semiconductor

Описание:

PCH -40V -70A POWER MOSFET - RD3

Упаковка:

Tape & Reel (TR)

Datasheet:

RD3G07BATTL1 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	RD3G07BATTL1
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Rohm Semiconductor
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	628cbc3e45d5bacb32414a526acf56ef
Current - Continuous Drain (Id) @ 25°C:	fe19f284a11e381cab3e68436fead637
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	21b26691d4660fe4f132fc4a22f663ea
Vgs(th) (Max) @ Id:	a7c6093f80ca0dfc858bc53da7afe406
Gate Charge (Qg) (Max) @ Vgs:	3a4a7dc7b45d7318558d72a40a6dd8b8
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	225c5ea6f80758a30e5af9349a5bd82b
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	b23c8e72e94ee8f87a345b51b84a3341
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	26334f21813abf4634f508e2476262a0
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95