RF4E080BNTR

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See Product Specifications

Mfr. #:

RF4E080BNTR

Mfr.:

Rohm Semiconductor

Описание:

MOSFET N-CH 30V 8A HUML2020L8

Упаковка:

Tape & Reel (TR)

Datasheet:

RF4E080BNTR Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	RF4E080BNTR
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Rohm Semiconductor
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	3f9b80b2313763e17eb9d4414601dfee
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	53178661946b45b557c84da4cac1e9ad
Vgs(th) (Max) @ Id:	47646805bddee9d06a7f0cc80c73c037
Gate Charge (Qg) (Max) @ Vgs:	cacaf6e2370296df565d5ad62dee01d0
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	4dc4ac6176e70c738a6fc56f8d622e4f
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	c2530d5e7da39ea670d9fb13a57ed38d
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	aecc69cfe59fb1fae01027cbd1a568fe
Package / Case:	2fe9bd58424e8e9e14bf4d1dcf508c73