RQ3E100GNTB

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See Product Specifications

Mfr. #:

RQ3E100GNTB

Mfr.:

Rohm Semiconductor

Описание:

MOSFET N-CH 30V 10A 8HSMT

Упаковка:

Tape & Reel (TR)

Datasheet:

RQ3E100GNTB Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	RQ3E100GNTB
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Rohm Semiconductor
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	52494cba539840e9393c9095a1421004
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	87874ba4db987e3cb6349bdcb04df383
Vgs(th) (Max) @ Id:	a7c6093f80ca0dfc858bc53da7afe406
Gate Charge (Qg) (Max) @ Vgs:	16175aa9bce608dac0e0984ae5b73ad9
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	ad6387a69207375000bf9e6a2b5e61e4
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	5773a014e77afbc3b487ea9e742e0b12
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	44066fa6bc22be4b4605be422381b964
Package / Case:	67fd376bd79eda48286f8f6e0131d8c9