RQ6E055BNTCR

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See Product Specifications

Mfr. #:

RQ6E055BNTCR

Mfr.:

Rohm Semiconductor

Описание:

MOSFET N-CH 30V 5.5A TSMT6

Упаковка:

Tape & Reel (TR)

Datasheet:

RQ6E055BNTCR Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	RQ6E055BNTCR
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Rohm Semiconductor
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	ff481aea56072e963da3cf35af32356a
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	67ca9d1cf68e086e248aab24fd1d3402
Vgs(th) (Max) @ Id:	a7c6093f80ca0dfc858bc53da7afe406
Gate Charge (Qg) (Max) @ Vgs:	b01b478a55069ff50d586b8ec5d1e4a8
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	efdf24746186fc402c61379050a329a6
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	6ceb14a6a136f3b1b5228f4ed05f6683
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	39de38edcc7d3fc376656f86d96513d6
Package / Case:	0be095bf904b063006f66328288b68f9