RS1E200BNTB

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Mfr. #:

RS1E200BNTB

Mfr.:

Rohm Semiconductor

Описание:

MOSFET N-CH 30V 20A 8HSOP

Упаковка:

Tape & Reel (TR)

Datasheet:

RS1E200BNTB Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	RS1E200BNTB
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Rohm Semiconductor
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	f3e50bda5dae0c1bd85e045d04d7383d
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	1dfb0601470af4dc3da93af73ac0aa8f
Vgs(th) (Max) @ Id:	a7c6093f80ca0dfc858bc53da7afe406
Gate Charge (Qg) (Max) @ Vgs:	2cc7f67f09e27ed812a8366953201d5d
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	dd90e7ba9839bb2b94edb472119e7983
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	4a88cadac40e752f710a2adde9fb6c81
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	0c3f6eec151cb6fcfa022fa47804d2a3
Package / Case:	7f82de9f5c66f9f803bc2f6ee2b90c1b

In Stock: 0

Stock:

0 Can Ship Immediately