RS1E350BNTB

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See Product Specifications

Mfr. #:

RS1E350BNTB

Mfr.:

Rohm Semiconductor

Описание:

MOSFET N-CH 30V 35A 8HSOP

Упаковка:

Tape & Reel (TR)

Datasheet:

RS1E350BNTB Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	RS1E350BNTB
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Rohm Semiconductor
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	3ae79fae666fbc50d5011ee35b33c896
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	bcb8203039c9fcedfaf7a2b3dec4eebe
Vgs(th) (Max) @ Id:	a7c6093f80ca0dfc858bc53da7afe406
Gate Charge (Qg) (Max) @ Vgs:	c0c3d4889b7def882149e656f0d10eb5
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	4f7081f31745de9bd1af8399a11f3b91
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	71fbc5583c0ebd33de81061dc2390256
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	0c3f6eec151cb6fcfa022fa47804d2a3
Package / Case:	7f82de9f5c66f9f803bc2f6ee2b90c1b

In Stock: 1593

Stock:

1593 Can Ship Immediately