RS6G120BGTB1

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Mfr. #:

RS6G120BGTB1

Mfr.:

Rohm Semiconductor

Описание:

NCH 40V 210A, HSOP8, POWER MOSFE

Упаковка:

Tape & Reel (TR)

Datasheet:

RS6G120BGTB1 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	RS6G120BGTB1
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Rohm Semiconductor
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	628cbc3e45d5bacb32414a526acf56ef
Current - Continuous Drain (Id) @ 25°C:	8ea4ca5725d23479e993f518885a34f1
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	51006a4b41d0997e2df15aa33effb070
Vgs(th) (Max) @ Id:	a7c6093f80ca0dfc858bc53da7afe406
Gate Charge (Qg) (Max) @ Vgs:	2b4fc689cea4c0dc7fdede6f79c808b0
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	0807b88bba8dae9e46d4f93a4514ad0b
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	3737633175d13abfc6ee84fc611f2789
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	0c3f6eec151cb6fcfa022fa47804d2a3
Package / Case:	7f82de9f5c66f9f803bc2f6ee2b90c1b

In Stock: 0

Stock:

0 Can Ship Immediately