RV4E031RPHZGTCR1

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See Product Specifications

Mfr. #:

RV4E031RPHZGTCR1

Mfr.:

Rohm Semiconductor

Описание:

MOSFET P-CH 30V 3.1A DFN1616-6W

Упаковка:

Tape & Reel (TR)

Datasheet:

RV4E031RPHZGTCR1 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	RV4E031RPHZGTCR1
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Rohm Semiconductor
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	d49d83c305514fd156423f6f36727178
Drive Voltage (Max Rds On, Min Rds On):	336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:	c34a8fa5f92df6ca777a7bffce9279e8
Vgs(th) (Max) @ Id:	a7c6093f80ca0dfc858bc53da7afe406
Gate Charge (Qg) (Max) @ Vgs:	8d032d2593c370b53369d2058e3681c3
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	ca28f0f2a8545392de7859a72fb78593
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	a8c66c4442cd4a3041823bb4b268783b
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	19594f10b77d3a5cc29d4f900f7ee637
Supplier Device Package:	ead1ac1f527d46c0b12d18e98524e870
Package / Case:	121f19bbeb969ec4a80b861a9752a89a