RW1A030APT2CR

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See Product Specifications

Mfr. #:

RW1A030APT2CR

Mfr.:

Rohm Semiconductor

Описание:

MOSFET P-CH 12V 3A 6WEMT

Упаковка:

Tape & Reel (TR)

Datasheet:

RW1A030APT2CR Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	RW1A030APT2CR
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Rohm Semiconductor
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	fd06a160a7273ee2b718dbba07f948a2
Current - Continuous Drain (Id) @ 25°C:	52e93565a89abe7c2cd3408249a5dc5b
Drive Voltage (Max Rds On, Min Rds On):	c20b0e732e8e50ac667a2996b676523a
Rds On (Max) @ Id, Vgs:	a9e3a4c2ccd1e3a6869012a47d3efd0a
Vgs(th) (Max) @ Id:	255bbeac52b52c6c3dc550097e1d43fd
Gate Charge (Qg) (Max) @ Vgs:	a19b17b45fe30d50a5a168595c1804a4
Vgs (Max):	be615e75fd3facfa72b74ca9116b2530
Input Capacitance (Ciss) (Max) @ Vds:	4511c0381a89298405e8af2868867a7a
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	b4a589eaee5d79dd61727540c38189e5
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	cc40161bf1064edb5c35040a8bc92e2b
Package / Case:	7c90fc2d381f537f5d12d3540113c957

In Stock: 535

Stock:

535 Can Ship Immediately