SCT2160KEGC11

SCT2160KEGC11

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SCT2160KEGC11
Описание:
1200V, 22A, THD, SILICON-CARBIDE
Упаковка:
Tube
Datasheet:
SCT2160KEGC11 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SCT2160KEGC11
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Rohm Semiconductor
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:ed9a2411b032b5ad765b9d5f6b1bc8e1
Drain to Source Voltage (Vdss):edca1d2343e4e5615ce51a879f622a76
Current - Continuous Drain (Id) @ 25°C:1665d0f324392ab2468aa154d47dcb98
Drive Voltage (Max Rds On, Min Rds On):4fe830fc54951fe85de6fed766954259
Rds On (Max) @ Id, Vgs:b9e66f9dc53ccc255159184dc90f53c1
Vgs(th) (Max) @ Id:e969693c5b5e7e5bcf2b58a767a33d59
Gate Charge (Qg) (Max) @ Vgs:eefd35ee44b18c4af277a3f52914ced3
Vgs (Max):d60a796aeb39730c44230be0ab3c0527
Input Capacitance (Ciss) (Max) @ Vds:aa7508f5b17cec055d4065bb6fd7c310
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):d5a6ce91f0ad073cd80d5367e3fb14c4
Operating Temperature:dfb4ad46e1ac805451b8f397e97630b4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:45cd3daa5ce173a88e6b9172c9abf302
Package / Case:748a8539a6c3c7dbdb455218c72fac40
In Stock: 0
Stock:
0 Can Ship Immediately
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