SCT2H12NYTB

SCT2H12NYTB

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SCT2H12NYTB
Описание:
SICFET N-CH 1700V 4A TO268
Упаковка:
Tape & Reel (TR)
Datasheet:
SCT2H12NYTB Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SCT2H12NYTB
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Rohm Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:ed9a2411b032b5ad765b9d5f6b1bc8e1
Drain to Source Voltage (Vdss):eefb5d410547fcbb0f7667be005adcb4
Current - Continuous Drain (Id) @ 25°C:7d3de555b1c3a2ae51332998545e5d39
Drive Voltage (Max Rds On, Min Rds On):4fe830fc54951fe85de6fed766954259
Rds On (Max) @ Id, Vgs:9ff1a10ae4e2bbcabb18c4cd89223c22
Vgs(th) (Max) @ Id:1300f6f7e2c0e59a3838b872aaf5df5a
Gate Charge (Qg) (Max) @ Vgs:73b3d5c925c54896e92114bd4e6f31e8
Vgs (Max):d60a796aeb39730c44230be0ab3c0527
Input Capacitance (Ciss) (Max) @ Vds:578282850436809fc0c151669a8d6848
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):687d0c64bc9d2ccd42bfb2d5fb80cb76
Operating Temperature:dfb4ad46e1ac805451b8f397e97630b4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:8a00d63cc4aaa345281e39f449bc7969
Package / Case:c03e2faa3efcea6b579a80e8a51287f6
In Stock: 0
Stock:
0 Can Ship Immediately
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