SCT2H12NYTB

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See Product Specifications

Mfr. #:

SCT2H12NYTB

Mfr.:

Rohm Semiconductor

Описание:

SICFET N-CH 1700V 4A TO268

Упаковка:

Tape & Reel (TR)

Datasheet:

SCT2H12NYTB Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	SCT2H12NYTB
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Rohm Semiconductor
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	ed9a2411b032b5ad765b9d5f6b1bc8e1
Drain to Source Voltage (Vdss):	eefb5d410547fcbb0f7667be005adcb4
Current - Continuous Drain (Id) @ 25°C:	7d3de555b1c3a2ae51332998545e5d39
Drive Voltage (Max Rds On, Min Rds On):	4fe830fc54951fe85de6fed766954259
Rds On (Max) @ Id, Vgs:	9ff1a10ae4e2bbcabb18c4cd89223c22
Vgs(th) (Max) @ Id:	1300f6f7e2c0e59a3838b872aaf5df5a
Gate Charge (Qg) (Max) @ Vgs:	73b3d5c925c54896e92114bd4e6f31e8
Vgs (Max):	d60a796aeb39730c44230be0ab3c0527
Input Capacitance (Ciss) (Max) @ Vds:	578282850436809fc0c151669a8d6848
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	687d0c64bc9d2ccd42bfb2d5fb80cb76
Operating Temperature:	dfb4ad46e1ac805451b8f397e97630b4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	8a00d63cc4aaa345281e39f449bc7969
Package / Case:	c03e2faa3efcea6b579a80e8a51287f6

In Stock: 0

Stock:

0 Can Ship Immediately