2SB1120F-TD-E

2SB1120F-TD-E

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2SB1120F-TD-E
Mfr.:
Описание:
PNP EPITAXIAL PLANAR SILICON
Упаковка:
Bulk
Datasheet:
2SB1120F-TD-E Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:2SB1120F-TD-E
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - Bipolar (BJT) - Single
Производитель:Sanyo
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:336d5ebc5436534e61d16e63ddfca327
Current - Collector (Ic) (Max):336d5ebc5436534e61d16e63ddfca327
Voltage - Collector Emitter Breakdown (Max):336d5ebc5436534e61d16e63ddfca327
Vce Saturation (Max) @ Ib, Ic:336d5ebc5436534e61d16e63ddfca327
Current - Collector Cutoff (Max):336d5ebc5436534e61d16e63ddfca327
DC Current Gain (hFE) (Min) @ Ic, Vce:336d5ebc5436534e61d16e63ddfca327
Power - Max:336d5ebc5436534e61d16e63ddfca327
Frequency - Transition:336d5ebc5436534e61d16e63ddfca327
Operating Temperature:336d5ebc5436534e61d16e63ddfca327
Mounting Type:336d5ebc5436534e61d16e63ddfca327
Package / Case:336d5ebc5436534e61d16e63ddfca327
Supplier Device Package:336d5ebc5436534e61d16e63ddfca327
In Stock: 0
Stock:
0 Can Ship Immediately
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