SCTWA60N120G2-4

SCTWA60N120G2-4

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SCTWA60N120G2-4
Описание:
SILICON CARBIDE POWER MOSFET 120
Упаковка:
Tube
Datasheet:
SCTWA60N120G2-4 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SCTWA60N120G2-4
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:STMicroelectronics
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:ed9a2411b032b5ad765b9d5f6b1bc8e1
Drain to Source Voltage (Vdss):edca1d2343e4e5615ce51a879f622a76
Current - Continuous Drain (Id) @ 25°C:1551d0db07ff2a9a5117bf21afa2832a
Drive Voltage (Max Rds On, Min Rds On):4fe830fc54951fe85de6fed766954259
Rds On (Max) @ Id, Vgs:e3be1ac24828f969420a077bea2bbeb0
Vgs(th) (Max) @ Id:a8d999915b067e20670485e9908f378a
Gate Charge (Qg) (Max) @ Vgs:1ef217e5e2d57998f7b131dbc3848a7d
Vgs (Max):6364b0f81798419c39133c8e9f96b654
Input Capacitance (Ciss) (Max) @ Vds:449a68ebda3f4de1fa2a8f27dffc741f
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):eaa1b7d1579a1264fd1870b7e10bc262
Operating Temperature:83453d3d439da08d47c0a30a4a236a74
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:f1f05fa7d6a97ae451c8efbfb2831dfa
Package / Case:f1f05fa7d6a97ae451c8efbfb2831dfa
In Stock: 0
Stock:
0 Can Ship Immediately
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