STTH30RQ06G2-TR

STTH30RQ06G2-TR

Images are for reference only
See Product Specifications

STTH30RQ06G2-TR
Описание:
600V ULTRAFAST RECTIFIERS
Упаковка:
Tape & Reel (TR)
Datasheet:
STTH30RQ06G2-TR Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:STTH30RQ06G2-TR
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:STMicroelectronics
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):9b63fe166715207d51445c226ada9c46
Current - Average Rectified (Io):226216c7da4bd5e6411f35000f195944
Voltage - Forward (Vf) (Max) @ If:0db19340933d3f627a010a1aa9fc325b
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):2555a458d4823a2c0ed644607c9982df
Current - Reverse Leakage @ Vr:0c817e8e0eb905bb295067fb23007708
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:99446f4470b43888d0c78d7d2cdfc956
Supplier Device Package:1594a05ffe94e47f5538aca4c746c9b7
Operating Temperature - Junction:77c8a005c820992ba63b5ddd2248b82d
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
SB3B0-T/R
SB3B0-T/R
EIC SEMICONDUCTOR INC.
SCHOTTKY BARRIER RECTIFIER DIODE
BAV21WS R9G
BAV21WS R9G
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD323
ES1DE-TP
ES1DE-TP
Micro Commercial Co
DIODE GEN PURP 200V 1A DO214AC
CD214A-B120LR
CD214A-B120LR
Bourns Inc.
DIO SBD VRRM 20V 1A SMA
RS3KHE3_A/H
RS3KHE3_A/H
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 3A DO214AB
1N5418USE3
1N5418USE3
Microchip Technology
UFR,FRR
JANTXV1N3595UR-1/TR
JANTXV1N3595UR-1/TR
Microchip Technology
SIGNAL/COMPUTER DIODE
R7010604XXUA
R7010604XXUA
Powerex Inc.
DIODE GEN PURP 600V 450A DO200AA
UH2C-E3/5BT
UH2C-E3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 2A DO214AA
VS-MBRD340TRPBF
VS-MBRD340TRPBF
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 3A DPAK
SF2003PTHC0G
SF2003PTHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 20A TO247AD
CRS10I30B(TE85L,QM
CRS10I30B(TE85L,QM
Toshiba Semiconductor and Storage
PB-F DIODE S-FLAT MOQ=3000 V=30
Вас также может заинтересовать
EVALSTSR30-60W
EVALSTSR30-60W
STMicroelectronics
BOARD EVAL USING L6668 & STSR30
STW4N150
STW4N150
STMicroelectronics
MOSFET N-CH 1500V 4A TO247-3
STP10LN80K5
STP10LN80K5
STMicroelectronics
MOSFET N-CH 800V 8A TO220
STP9NK65Z
STP9NK65Z
STMicroelectronics
MOSFET N-CH 650V 6.4A TO220AB
STB47N60DM6AG
STB47N60DM6AG
STMicroelectronics
AUTOMOTIVE-GRADE N-CHANNEL 600 V
STM32F103R6T6ATR
STM32F103R6T6ATR
STMicroelectronics
IC MCU 32BIT 32KB FLASH 64LQFP
SPC56EC64L7B9E0Y
SPC56EC64L7B9E0Y
STMicroelectronics
IC MCU 32BIT 1.5MB FLASH 176LQFP
E-LS1240A
E-LS1240A
STMicroelectronics
IC TELECOM INTERFACE 8MINI DIP
M74HC02B1R
M74HC02B1R
STMicroelectronics
IC GATE NOR 4CH 2-INP 14DIP
M24C64-DFMC6TG
M24C64-DFMC6TG
STMicroelectronics
IC EEPROM 64KBIT I2C 1MHZ 8MLP
L4995JTR
L4995JTR
STMicroelectronics
IC REG LIN 5V 500MA POWERSSO-12
LM323K
LM323K
STMicroelectronics
IC REG LINEAR 5V 3A TO3