1N4003G R1G

1N4003G R1G

Images are for reference only
See Product Specifications

1N4003G R1G
Описание:
DIODE GEN PURP 200V 1A DO204AL
Упаковка:
Tape & Reel (TR)
Datasheet:
1N4003G R1G Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:1N4003G R1G
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Taiwan Semiconductor Corporation
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):b86aa01bc1f9484a191794819edcfc06
Current - Average Rectified (Io):0723dfd10075aee37a1804a728349dc3
Voltage - Forward (Vf) (Max) @ If:1b24f38bdfd661e26937a14d6ddb7cc1
Speed:506dc4c3c6b37b60cdf6e54561f7a530
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:f09d9fa82484a18e018c4f4aa84cdd0b
Capacitance @ Vr, F:538661a01bdc711f132de295cc362286
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:d91f9d94af13eee9be6db2c0abc9eaa6
Supplier Device Package:7c574f566f70e9e79553d88cc52ad49c
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
NTE5866
NTE5866
NTE Electronics, Inc
R-800PRV 6A CATH CASE
MBR120VLSFT1G
MBR120VLSFT1G
onsemi
DIODE SCHOTTKY 20V 1A SOD123FL
SB320E-G
SB320E-G
Comchip Technology
DIODE SCHOTTKY 20V 3A DO201AD
AM01AV0
AM01AV0
Sanken
DIODE GEN PURP 600V 1A AXIAL
VS-305UA250P4
VS-305UA250P4
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 2KV 300A DO205AB
PX1500K-CT
PX1500K-CT
Diotec Semiconductor
CUT-TAPE VERSION. STANDARD RECO
1N1400R
1N1400R
Solid State Inc.
DO8 100 AMP SILICON RECTIFIER
BYM07-300HE3/83
BYM07-300HE3/83
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 300V 500MA DO213
IDH20G65C5XKSA1
IDH20G65C5XKSA1
Infineon Technologies
DIODE SCHOTTKY 650V 20A TO220-2
VS-VSKE270-20
VS-VSKE270-20
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 2KV 270A MAGNAPAK
SF30AG-B
SF30AG-B
Diodes Incorporated
DIODE GEN PURP 50V 3A DO201AD
JAN1N6661
JAN1N6661
Microchip Technology
RECTIFIER
Вас также может заинтересовать
SMAJ30CA R3G
SMAJ30CA R3G
Taiwan Semiconductor Corporation
TVS DIODE 30VWM 48.4VC DO214AC
SMCJ130A R7G
SMCJ130A R7G
Taiwan Semiconductor Corporation
TVS DIODE 130VWM 209VC DO214AB
1.5KE100CAHA0G
1.5KE100CAHA0G
Taiwan Semiconductor Corporation
TVS DIODE 85.5VWM 137VC DO201
1.5KE56CAHB0G
1.5KE56CAHB0G
Taiwan Semiconductor Corporation
TVS DIODE 47.8VWM 77VC DO201
P4KE300AHB0G
P4KE300AHB0G
Taiwan Semiconductor Corporation
TVS DIODE 256VWM 414VC DO204AL
TS25P02GHD2G
TS25P02GHD2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1P 100V 25A TS-6P
GBU401H
GBU401H
Taiwan Semiconductor Corporation
DIODE BRIDGE 4A 50V GBU
SS13L MHG
SS13L MHG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A SUB SMA
LSR102-J0 L0
LSR102-J0 L0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 1A MELF
SR202H
SR202H
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 2A 10V TO220AB
BZD27C18P MQG
BZD27C18P MQG
Taiwan Semiconductor Corporation
DIODE ZENER 17.95V 1W SUB SMA
BZX55C27 A0G
BZX55C27 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 27V 500MW DO35