1N4936G R1G

1N4936G R1G

Images are for reference only
See Product Specifications

1N4936G R1G
Описание:
DIODE GEN PURP 400V 1A DO204AL
Упаковка:
Tape & Reel (TR)
Datasheet:
1N4936G R1G Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:1N4936G R1G
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Taiwan Semiconductor Corporation
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):a51e6c3b115ead349deb13cbf5a43f23
Current - Average Rectified (Io):0723dfd10075aee37a1804a728349dc3
Voltage - Forward (Vf) (Max) @ If:f03f39ff8ceca4763d1520cdfb28b301
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):aaab207b8e6bc6eec210bb10f494acf5
Current - Reverse Leakage @ Vr:eea8703a936f4d10e45752881a22d5be
Capacitance @ Vr, F:538661a01bdc711f132de295cc362286
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:d91f9d94af13eee9be6db2c0abc9eaa6
Supplier Device Package:7c574f566f70e9e79553d88cc52ad49c
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
BAS70,215
BAS70,215
Nexperia USA Inc.
DIODE SCHOTTKY 70V 70MA TO236AB
HSB88YPTR-E
HSB88YPTR-E
Renesas Electronics America Inc
RECTIFIER DIODE, 0.015A, 10V
VS-ETH3007-M3
VS-ETH3007-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 650V 30A TO220AC
SVT12100V_R1_00001
SVT12100V_R1_00001
Panjit International Inc.
TO-277, SKY
RS3G
RS3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO214AB
VS-8ETH06-1HM3
VS-8ETH06-1HM3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 8A TO262
HSM830JE3/TR13
HSM830JE3/TR13
Microchip Technology
DIODE SCHOTTKY 30V 8A DO214AB
R3650
R3650
Microchip Technology
STD RECTIFIER
1N4055
1N4055
Powerex Inc.
DIODE GEN PURP 900V 275A DO205AB
JANTX1N3912A
JANTX1N3912A
Microchip Technology
RECTIFIER
RL204-AP
RL204-AP
Micro Commercial Co
DIODE GEN PURP 50V 2A DO15
GP10GE-110E3/93
GP10GE-110E3/93
Vishay General Semiconductor - Diodes Division
RECTIFIER
Вас также может заинтересовать
SMDJ26AH
SMDJ26AH
Taiwan Semiconductor Corporation
TVS DIODE 26VWM 42.1VC DO214AB
SMDJ22A R7G
SMDJ22A R7G
Taiwan Semiconductor Corporation
TVS DIODE 22VWM 35.5VC DO214AB
1.5KE7.5CA B0G
1.5KE7.5CA B0G
Taiwan Semiconductor Corporation
TVS DIODE 6.4VWM 11.3VC DO201
PGSMAJ11AHF4G
PGSMAJ11AHF4G
Taiwan Semiconductor Corporation
TVS DIODE 11VWM 18.2VC DO214AC
MUR120S R5G
MUR120S R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO214AA
SS22L RHG
SS22L RHG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 2A SUB SMA
ES1ALHMHG
ES1ALHMHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
RSFKLHMTG
RSFKLHMTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 500MA SUBSMA
S1BLHMTG
S1BLHMTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A SUB SMA
HS5F R6
HS5F R6
Taiwan Semiconductor Corporation
DIODE GENERAL PURPOSE DO214AB
1SMB5954
1SMB5954
Taiwan Semiconductor Corporation
DIODE ZENER 160V 3W DO214AA
TSM1NB60SCT A3
TSM1NB60SCT A3
Taiwan Semiconductor Corporation
MOSFET N-CH 600V 500MA TO92