1N5401GHB0G

1N5401GHB0G

Images are for reference only
See Product Specifications

1N5401GHB0G
Описание:
DIODE GEN PURP 100V 3A DO201AD
Упаковка:
Bulk
Datasheet:
1N5401GHB0G Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:1N5401GHB0G
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Taiwan Semiconductor Corporation
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):227b5c7c7a2ed2ea3da210ed0860030d
Current - Average Rectified (Io):657dae0913ee12be6fb2a6f687aae1c7
Voltage - Forward (Vf) (Max) @ If:834b97faeb5f8d3e0f2b4f19caa9e317
Speed:506dc4c3c6b37b60cdf6e54561f7a530
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:5b5b451822cc0173087babe6279facc7
Capacitance @ Vr, F:a57806ff7c07347f7b063fff8bb8613e
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:3e6133272744ddc764059b0c9b6e5360
Supplier Device Package:770ae6406206d7dd099f2c38b75ee7c7
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
NTE605A
NTE605A
NTE Electronics, Inc
VARISTOR TEMP COMP DIODE DO-35
MB39_R1_00001
MB39_R1_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
SS2P6-M3/85A
SS2P6-M3/85A
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 2A DO220AA
V3P22-M3/I
V3P22-M3/I
Vishay General Semiconductor - Diodes Division
SCHOTTKY RECTIFIER 3A 200V SMP
GP10-4005E-E3/54
GP10-4005E-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
SDB06S60
SDB06S60
Infineon Technologies
DIODE SCHOTTKY 600V 6A D2PAK
PR1007GL-T
PR1007GL-T
Diodes Incorporated
DIODE GEN PURP 1KV 1A DO41
SS29HE3/52T
SS29HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 90V 1.5A DO214AA
JANTXV1N5621US
JANTXV1N5621US
Microchip Technology
DIODE GEN PURP 800V 1A D5A
VS-8EWF02STRRPBF
VS-8EWF02STRRPBF
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A D-PAK
UG06BHA1G
UG06BHA1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 600MA TS-1
SF12G-AP
SF12G-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41
Вас также может заинтересовать
1K5SMPC33APH
1K5SMPC33APH
Taiwan Semiconductor Corporation
1500W, 33V, 5%, UNIDIRECTIONAL,
SA150AH
SA150AH
Taiwan Semiconductor Corporation
TVS DIODE 150VWM 243VC DO204AC
SMCJ33AHM6G
SMCJ33AHM6G
Taiwan Semiconductor Corporation
TVS DIODE 33VWM 53.3VC DO214AB
SMCJ43A M6G
SMCJ43A M6G
Taiwan Semiconductor Corporation
TVS DIODE 43VWM 69.4VC DO214AB
ES1ALHRQG
ES1ALHRQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
ES1FLHRTG
ES1FLHRTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 1A SUB SMA
HS1DL MQG
HS1DL MQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SUB SMA
MBRF16150HC0G
MBRF16150HC0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 16A ITO220AC
SFF1006GAHC0G
SFF1006GAHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 10A ITO220AB
BZT52B39 RHG
BZT52B39 RHG
Taiwan Semiconductor Corporation
DIODE ZENER 39V 500MW SOD123F
1M120ZH
1M120ZH
Taiwan Semiconductor Corporation
DIODE ZENER 120V 1W DO204AL
BZD27C120PHM2G
BZD27C120PHM2G
Taiwan Semiconductor Corporation
DIODE ZENER 120.5V 1W SUB SMA