1N5407GHB0G

1N5407GHB0G

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1N5407GHB0G
Описание:
DIODE GEN PURP 800V 3A DO201AD
Упаковка:
Bulk
Datasheet:
1N5407GHB0G Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:1N5407GHB0G
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Taiwan Semiconductor Corporation
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):faca79d8bea430c6302af6f2e2f59d12
Current - Average Rectified (Io):657dae0913ee12be6fb2a6f687aae1c7
Voltage - Forward (Vf) (Max) @ If:1e2bf95b6dcc7a4f9914283084b88cd6
Speed:506dc4c3c6b37b60cdf6e54561f7a530
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:f919a7d3e2c66b1de6403d6aeb9d6ca8
Capacitance @ Vr, F:a57806ff7c07347f7b063fff8bb8613e
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:3e6133272744ddc764059b0c9b6e5360
Supplier Device Package:770ae6406206d7dd099f2c38b75ee7c7
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 0
Stock:
0 Can Ship Immediately
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