1N5819 R1G

1N5819 R1G

Images are for reference only
See Product Specifications

1N5819 R1G
Описание:
DIODE SCHOTTKY 40V 1A DO204AL
Упаковка:
Tape & Reel (TR)
Datasheet:
1N5819 R1G Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:1N5819 R1G
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Taiwan Semiconductor Corporation
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:aaa0376e51a49c9332dde4f69ea77455
Voltage - DC Reverse (Vr) (Max):628cbc3e45d5bacb32414a526acf56ef
Current - Average Rectified (Io):0723dfd10075aee37a1804a728349dc3
Voltage - Forward (Vf) (Max) @ If:6b41c6886d384a440bfdc3885e68e8dd
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:c78acc19d6994ab0d333db627e750676
Capacitance @ Vr, F:b903f8979a3b65d69290043a7728e24c
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:d91f9d94af13eee9be6db2c0abc9eaa6
Supplier Device Package:7c574f566f70e9e79553d88cc52ad49c
Operating Temperature - Junction:b2db944416af296787012d8a4bee58d3
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
STTH30RQ06G2-TR
STTH30RQ06G2-TR
STMicroelectronics
600V ULTRAFAST RECTIFIERS
VS-8ETU04STRL-M3
VS-8ETU04STRL-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 8A TO262
VB20120SG-M3/4W
VB20120SG-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 20A 120V TO-263AB
VS-40HFLR80S05
VS-40HFLR80S05
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 40A DO203AB
1N3661
1N3661
Microchip Technology
STD RECTIFIER
JANS1N5297-1/TR
JANS1N5297-1/TR
Microchip Technology
CURRENT REGULATOR
RGP02-18EHE3/73
RGP02-18EHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.8KV 500MA DO204
RS1PGHM3/84A
RS1PGHM3/84A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO220AA
SK25AHM2G
SK25AHM2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 2A DO214AC
1F7G-AP
1F7G-AP
Micro Commercial Co
DIODE GPP FAST 1A R-1
ESH3B R7
ESH3B R7
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB
MSASC100W80HX/TR
MSASC100W80HX/TR
Microchip Technology
POWER SCHOTTKY
Вас также может заинтересовать
SMCJ36A R7G
SMCJ36A R7G
Taiwan Semiconductor Corporation
TVS DIODE 36VWM 58.1VC DO214AB
P6SMB120CA R5G
P6SMB120CA R5G
Taiwan Semiconductor Corporation
TVS DIODE 102VWM 165VC DO214AA
SMCJ36A V6G
SMCJ36A V6G
Taiwan Semiconductor Corporation
TVS DIODE 36VWM 58.1VC DO214AB
SMDJ33A V7G
SMDJ33A V7G
Taiwan Semiconductor Corporation
TVS DIODE 33VWM 53.3VC DO214AB
PGSMAJ8.5A M2G
PGSMAJ8.5A M2G
Taiwan Semiconductor Corporation
TVS DIODE 8.5VWM 14.4VC DO214AC
KBU405G
KBU405G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 600V 4A KBU
UF1MH
UF1MH
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A DO204AL
HER157G
HER157G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1.5A DO204AC
HS1DLW RVG
HS1DLW RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SOD123W
UF1AH
UF1AH
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO-41
BZD27C6V8P MQG
BZD27C6V8P MQG
Taiwan Semiconductor Corporation
DIODE ZENER 6.8V 1W SUB SMA
BZV55C10 L1G
BZV55C10 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 10V 500MW MINI MELF