1N5819HA0G

1N5819HA0G

Images are for reference only
See Product Specifications

1N5819HA0G
Описание:
DIODE SCHOTTKY 40V 1A DO204AL
Упаковка:
Tape & Box (TB)
Datasheet:
1N5819HA0G Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:1N5819HA0G
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Taiwan Semiconductor Corporation
Упаковка:Tape & Box (TB)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:aaa0376e51a49c9332dde4f69ea77455
Voltage - DC Reverse (Vr) (Max):628cbc3e45d5bacb32414a526acf56ef
Current - Average Rectified (Io):0723dfd10075aee37a1804a728349dc3
Voltage - Forward (Vf) (Max) @ If:6b41c6886d384a440bfdc3885e68e8dd
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:c78acc19d6994ab0d333db627e750676
Capacitance @ Vr, F:b903f8979a3b65d69290043a7728e24c
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:d91f9d94af13eee9be6db2c0abc9eaa6
Supplier Device Package:7c574f566f70e9e79553d88cc52ad49c
Operating Temperature - Junction:b2db944416af296787012d8a4bee58d3
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
DLA60I1200HA
DLA60I1200HA
IXYS
DIODE GEN PURP 1200V 60A TO247AD
SK25F_R2_00001
SK25F_R2_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
ESH1PDHM3/84A
ESH1PDHM3/84A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO220AA
V8PL6-M3/86A
V8PL6-M3/86A
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 4.3A TO277A
SK83CH
SK83CH
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 8A DO214AB
S85M
S85M
GeneSiC Semiconductor
DIODE GEN PURP 1KV 85A DO5
1N3972
1N3972
Microchip Technology
STD RECTIFIER
DSA9-16F
DSA9-16F
IXYS
DIODE AVALANCHE 1.6KV 11A DO203
UG2002-T
UG2002-T
Diodes Incorporated
DIODE GEN PURP 100V 2A DO15
AS4PMHM3/86A
AS4PMHM3/86A
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 1KV 2.4A TO277
RGF1DHE3/67A
RGF1DHE3/67A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO214BA
MSASC150H60LX/TR
MSASC150H60LX/TR
Microchip Technology
POWER SCHOTTKY
Вас также может заинтересовать
BZW04-110HA0G
BZW04-110HA0G
Taiwan Semiconductor Corporation
TVS DIODE 111VWM 179VC DO204AL
SA120AHB0G
SA120AHB0G
Taiwan Semiconductor Corporation
TVS DIODE 120VWM 193VC DO204AC
1.5SMC68 R6G
1.5SMC68 R6G
Taiwan Semiconductor Corporation
TVS DIODE 1500W DO214AB SMC
KBU405G
KBU405G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 600V 4A KBU
SRF10150
SRF10150
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTT 150V ITO220AB
ESH1C R3G
ESH1C R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 1A DO214AC
SS14LHRUG
SS14LHRUG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 1A SUB SMA
ES1C R3G
ES1C R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 1A DO214AC
SK59C R6
SK59C R6
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO214AB
MMSZ5234B RHG
MMSZ5234B RHG
Taiwan Semiconductor Corporation
DIODE ZENER 6.2V 500MW SOD123F
BZX85C20 R0G
BZX85C20 R0G
Taiwan Semiconductor Corporation
DIODE ZENER 20V 1.3W DO204AL
BZD17C11P MQG
BZD17C11P MQG
Taiwan Semiconductor Corporation
DIODE ZENER 11V 800MW SUB SMA