BSS123W

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See Product Specifications

Mfr. #:

BSS123W

Mfr.:

Taiwan Semiconductor Corporation

Описание:

100V, 0.16A, SINGLE N-CHANNEL PO

Упаковка:

Tape & Reel (TR)

Datasheet:

BSS123W Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	BSS123W
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Taiwan Semiconductor Corporation
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	40bdabb4c2515143cd5d2f6a4efd26db
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	22bbd2c7a3b3dfcf78e5b191acf09019
Vgs(th) (Max) @ Id:	bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:	df45f77d7a27ff5f13117563d7056464
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	4238d5962b99260dd8e485438ed7cfe4
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	58ed51444e0b62618d6359a93fd03348
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	c4937a7af6425ed4f99ff5e1d5cd4746
Package / Case:	2cffa920bac58c995bd937e7a19a7bc4