DBLS103G

DBLS103G

Images are for reference only
See Product Specifications

DBLS103G
Описание:
BRIDGE RECT 1PHASE 200V 1A DBLS
Упаковка:
Tape & Reel (TR)
Datasheet:
DBLS103G Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:DBLS103G
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Bridge Rectifiers
Производитель:Taiwan Semiconductor Corporation
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:04d59a4f67a72cfc8a6f8046b91ff693
Technology:eb6d8ae6f20283755b339c0dc273988b
Voltage - Peak Reverse (Max):b86aa01bc1f9484a191794819edcfc06
Current - Average Rectified (Io):e61c2e8e49eca0e4942ddb2b339c10b0
Voltage - Forward (Vf) (Max) @ If:50843c8b4f2ebc6ab98b8d8833a54de0
Current - Reverse Leakage @ Vr:c39bd063ffa51bf5dd1d67689af1b0a0
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:101477a309da38dc2fcceed5a2d2cb07
Supplier Device Package:59f0d59fb19ec883292977d285719fcb
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
NTE5302
NTE5302
NTE Electronics, Inc
R-BRIDGE 800V 8 AMP SIP
KBPC801
KBPC801
Diotec Semiconductor
1PH BRIDGE 19X19X6.8 100V 8A
RS2505M
RS2505M
Rectron USA
BRIDGE RECT GLASS 600V 25A RS25M
RBV1006
RBV1006
EIC SEMICONDUCTOR INC.
BRIGDE RECTIFIER 10A 600V, CASE
GBU8M-E3/51
GBU8M-E3/51
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 1KV 3.9A GBU
GBI20D
GBI20D
Diotec Semiconductor
1PH BRIDGE 30X20X3.6 200V 20A
VUO190-08NO7
VUO190-08NO7
IXYS
BRIDGE RECT 3P 800V 248A PWS-E1
VS-KBPC606
VS-KBPC606
Vishay General Semiconductor - Diodes Division
BRIDGE RECTIFIER 600V 6.0A D-72
469-1
469-1
Microchip Technology
SINGLE PHASE BRIDGE
3N259-E4/45
3N259-E4/45
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 1KV 2A KBPM
TS40P07G C2G
TS40P07G C2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 1KV 40A TS-6P
KBJL1508G-BP
KBJL1508G-BP
Micro Commercial Co
DIODE BRIDGE KBJL
Вас также может заинтересовать
P6KE110CA
P6KE110CA
Taiwan Semiconductor Corporation
TVS DIODE 94VWM 152VC DO15
P4SMA16CAH
P4SMA16CAH
Taiwan Semiconductor Corporation
TVS DIODE 13.6VWM 22.5VC DO214AC
P4SMA7.5CAHR3G
P4SMA7.5CAHR3G
Taiwan Semiconductor Corporation
TVS DIODE 6.4VWM 11.3VC DO214AC
P4KE180CA A0G
P4KE180CA A0G
Taiwan Semiconductor Corporation
TVS DIODE 154VWM 246VC DO204AL
BZW06-188 A0G
BZW06-188 A0G
Taiwan Semiconductor Corporation
TVS DIODE 188VWM 388VC DO204AC
P4KE47CAHB0G
P4KE47CAHB0G
Taiwan Semiconductor Corporation
TVS DIODE 40.2VWM 64.8VC DO204AL
1.5SMC15C R6
1.5SMC15C R6
Taiwan Semiconductor Corporation
TVS DIODE 3000W DO214AB SMC
HS1KL R3G
HS1KL R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A SUB SMA
S5K R6
S5K R6
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO214AB
BZD17C200P RVG
BZD17C200P RVG
Taiwan Semiconductor Corporation
DIODE ZENER 200V 800MW SUB SMA
1SMB5937 R5G
1SMB5937 R5G
Taiwan Semiconductor Corporation
DIODE ZENER 33V 3W DO214AA
BZD17C43P RUG
BZD17C43P RUG
Taiwan Semiconductor Corporation
DIODE ZENER 43V 800MW SUB SMA