GPAS1006 MNG

GPAS1006 MNG

Images are for reference only
See Product Specifications

GPAS1006 MNG
Описание:
DIODE GEN PURP 800V 10A TO263AB
Упаковка:
Tape & Reel (TR)
Datasheet:
GPAS1006 MNG Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:GPAS1006 MNG
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Taiwan Semiconductor Corporation
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):faca79d8bea430c6302af6f2e2f59d12
Current - Average Rectified (Io):600f6857f966a3ecb5ca3022150669c1
Voltage - Forward (Vf) (Max) @ If:1a2f43f3f47821e7900506002084e320
Speed:506dc4c3c6b37b60cdf6e54561f7a530
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:f919a7d3e2c66b1de6403d6aeb9d6ca8
Capacitance @ Vr, F:315ceeab95743393e181ecc8ad265b12
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:99446f4470b43888d0c78d7d2cdfc956
Supplier Device Package:c1651030b5e959c4697991550f73f503
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
S1AB-13-F
S1AB-13-F
Diodes Incorporated
DIODE GEN PURP 50V 1A SMB
SBA130CH_R1_00001
SBA130CH_R1_00001
Panjit International Inc.
EXTREME LOW VF SCHOTTKY RECTIFIE
RHRG3040
RHRG3040
Harris Corporation
RECTIFIER DIODE
PG5399_R2_00001
PG5399_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION PLASTI
1SS389,L3F
1SS389,L3F
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 10V 100MA ESC
BAS321,115
BAS321,115
Nexperia USA Inc.
DIODE GEN PURP 200V 250MA SOD323
IDK16G120C5XTMA1
IDK16G120C5XTMA1
Infineon Technologies
SIC DISCRETE
RS1PJHM3_A/H
RS1PJHM3_A/H
Vishay General Semiconductor - Diodes Division
DIODE 100V 1A DO-220AA
BYW53-TR
BYW53-TR
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 400V 2A SOD57
HSM880JE3/TR13
HSM880JE3/TR13
Microchip Technology
DIODE SCHOTTKY 80V 8A DO214AB
1N6932UTK1AS
1N6932UTK1AS
Microchip Technology
POWER SCHOTTKY
ES1JLHRFG
ES1JLHRFG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SUB SMA
Вас также может заинтересовать
SMB10J16CA
SMB10J16CA
Taiwan Semiconductor Corporation
TVS DIODE 16VWM 26VC DO214AA
1KSMB15CA R5G
1KSMB15CA R5G
Taiwan Semiconductor Corporation
TVS DIODE 12.8VWM 21.2VC DO214AA
P4SMA22A R3G
P4SMA22A R3G
Taiwan Semiconductor Corporation
TVS DIODE 18.8VWM 30.6VC DO214AC
SMBJ110CAHR5G
SMBJ110CAHR5G
Taiwan Semiconductor Corporation
TVS DIODE 110VWM 177VC DO214AA
PGSMAJ54AHE3G
PGSMAJ54AHE3G
Taiwan Semiconductor Corporation
TVS DIODE 54VWM 87.1VC DO214AC
SS34HM6G
SS34HM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 40V 3A DO214AB
SFS1602GHMNG
SFS1602GHMNG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 16A TO263AB
SS215LHRFG
SS215LHRFG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 2A SUB SMA
HER207G A0G
HER207G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 2A DO204AC
SR203HB0G
SR203HB0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 2A DO204AC
MUR440S R6G
MUR440S R6G
Taiwan Semiconductor Corporation
DIODE GENERAL PURPOSE DO214AB
HS5F R6G
HS5F R6G
Taiwan Semiconductor Corporation
DIODE GENERAL PURPOSE DO214AB