HERAF1006G C0G

HERAF1006G C0G

Images are for reference only
See Product Specifications

HERAF1006G C0G
Описание:
DIODE GEN PURP 600V 10A ITO220AC
Упаковка:
Tube
Datasheet:
HERAF1006G C0G Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:HERAF1006G C0G
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Taiwan Semiconductor Corporation
Упаковка:Tube
Product Status:ccbd814be8d73616679e7f5a64ce1cee
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):9b63fe166715207d51445c226ada9c46
Current - Average Rectified (Io):600f6857f966a3ecb5ca3022150669c1
Voltage - Forward (Vf) (Max) @ If:b624027fd8b25f11c8e56782f07f0199
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):0bddd2e59a3103d8b7c18efcf09969e0
Current - Reverse Leakage @ Vr:cd08854385deda7826cbcc335b36c2dc
Capacitance @ Vr, F:37bb8e09d217746b5f64d8b4508e5e8a
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:1dd495d5dc873ac626fdae7730f9147f
Supplier Device Package:7ea579c277adc763ea1450ddd666bb34
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
BAS3010B03WE6327HTSA1
BAS3010B03WE6327HTSA1
Infineon Technologies
DIODE SCHOTTKY 30V 1A SOD323-2
1SS403,H3F
1SS403,H3F
Toshiba Semiconductor and Storage
DIODE GEN PURP 200V 100MA USC
VS-6ESH02-M3/86A
VS-6ESH02-M3/86A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 6A TO277A
ES3CHE3_A/H
ES3CHE3_A/H
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 3A DO214AB
VS-8ETH06SHM3
VS-8ETH06SHM3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 8A TO263
1N3649
1N3649
Microchip Technology
STANDARD RECTIFIER
JANS1N5287-1/TR
JANS1N5287-1/TR
Microchip Technology
CURRENT REGULATOR
JANTX1N6081
JANTX1N6081
Semtech Corporation
D MET 5A SFST 150V HR
1N5401/54
1N5401/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 3A DO201AD
RS3G-13
RS3G-13
Diodes Incorporated
DIODE GEN PURP 400V 3A SMC
S4PKHM3/87A
S4PKHM3/87A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 4A TO277A
EM518GP-AP
EM518GP-AP
Micro Commercial Co
DIODE GP 1A DO-41
Вас также может заинтересовать
SMAJ24CAHR3G
SMAJ24CAHR3G
Taiwan Semiconductor Corporation
TVS DIODE 24VWM 38.9VC DO214AC
SMAJ75CAHR3G
SMAJ75CAHR3G
Taiwan Semiconductor Corporation
TVS DIODE 75VWM 121VC DO214AC
SMCJ17AHM6G
SMCJ17AHM6G
Taiwan Semiconductor Corporation
TVS DIODE 17VWM 27.6VC DO214AB
P6SMB8.2AHR5G
P6SMB8.2AHR5G
Taiwan Semiconductor Corporation
TVS DIODE 7.02VWM 12.1VC DO214AA
P6KE24AHB0G
P6KE24AHB0G
Taiwan Semiconductor Corporation
TVS DIODE 20.5VWM 33.2VC DO204AC
SMCJ48 M6G
SMCJ48 M6G
Taiwan Semiconductor Corporation
TVS DIODE 1500W DO214AB SMC
SK82C V6G
SK82C V6G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 8A 20V DO-214AB
MUR360S R6G
MUR360S R6G
Taiwan Semiconductor Corporation
DIODE GENERAL PURPOSE DO214AB
SRA2040
SRA2040
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 20A TO220AC
BZX85C3V6 R0G
BZX85C3V6 R0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.6V 1.3W DO204AL
2M180Z
2M180Z
Taiwan Semiconductor Corporation
DIODE ZENER 180V 2W DO204AC
MMBT3906L RFG
MMBT3906L RFG
Taiwan Semiconductor Corporation
TRANS PNP 40V 0.2A SOT23