KBP102G C2

KBP102G C2

Images are for reference only
See Product Specifications

KBP102G C2
Описание:
BRIDGE RECT 1PHASE 100V 1A KBP
Упаковка:
Tube
Datasheet:
KBP102G C2 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:KBP102G C2
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Bridge Rectifiers
Производитель:Taiwan Semiconductor Corporation
Упаковка:Tube
Product Status:ec30c235d0eb792797af1aa1d11759a7
Diode Type:04d59a4f67a72cfc8a6f8046b91ff693
Technology:eb6d8ae6f20283755b339c0dc273988b
Voltage - Peak Reverse (Max):227b5c7c7a2ed2ea3da210ed0860030d
Current - Average Rectified (Io):e61c2e8e49eca0e4942ddb2b339c10b0
Voltage - Forward (Vf) (Max) @ If:1b24f38bdfd661e26937a14d6ddb7cc1
Current - Reverse Leakage @ Vr:156ca8cb21560d63228b4023a7ce3dee
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:4511996d495a42f6e7040ba6b6d41bd9
Supplier Device Package:ef3340645f967f79f3827b90735cfa90
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
GBL02-E3/45
GBL02-E3/45
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 200V 3A GBL
RMB6S-TP
RMB6S-TP
Micro Commercial Co
BRIDGE RECT 1P 600V 500MA MBS-1
ABS8
ABS8
SMC Diode Solutions
BRIDGE RECT 1P 800V 500MA ABS
BR806
BR806
EIC SEMICONDUCTOR INC.
STD 8A, CASE TYPE: BR10
KBPC5010-A1-0000
KBPC5010-A1-0000
Yangzhou Yangjie Electronic Technology Co.,Ltd
RECT BRIDGE 1000V 50A GBPC50-G
W04G-E4/51
W04G-E4/51
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 400V 1.5A WOG
KBU804G
KBU804G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 400V 8A KBU
VBO13-14AO2
VBO13-14AO2
IXYS
BRIDGE RECT 1P 1.4KV 18A FO-A
GBU604HD2G
GBU604HD2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 400V 6A GBU
GBPC2508M T0G
GBPC2508M T0G
Taiwan Semiconductor Corporation
BRIDGE RECT 1P 800V 25A GBPC-M
G3SBA60L-5702M3/45
G3SBA60L-5702M3/45
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 600V 2.3A GBU
GBU4DL-5303M3/51
GBU4DL-5303M3/51
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 200V 3A GBU
Вас также может заинтересовать
SMA4S36AH
SMA4S36AH
Taiwan Semiconductor Corporation
TVS DIODE 36VWM 58.4VC SOD128
SMDJ58A R7G
SMDJ58A R7G
Taiwan Semiconductor Corporation
TVS DIODE 58VWM 93.6VC DO214AB
1.5KE15CAHB0G
1.5KE15CAHB0G
Taiwan Semiconductor Corporation
TVS DIODE 12.8VWM 21.2VC DO201
BZW04-154 B0G
BZW04-154 B0G
Taiwan Semiconductor Corporation
TVS DIODE 154VWM 246VC DO204AL
1.5SMC39AHR6G
1.5SMC39AHR6G
Taiwan Semiconductor Corporation
TVS DIODE 33.3VWM 53.9VC DO214AB
SMCJ16A R6
SMCJ16A R6
Taiwan Semiconductor Corporation
TVS DIODE 1500W DO214AB SMC
DBLS155G
DBLS155G
Taiwan Semiconductor Corporation
BRIDGE RECT 1P 600V 1.5A DBLS
TSD2G R5G
TSD2G R5G
Taiwan Semiconductor Corporation
2A 400V ESD CAPABILITY RECTIFIER
ES15GLW
ES15GLW
Taiwan Semiconductor Corporation
DIODE, SUPER FAST
1N4757G R0G
1N4757G R0G
Taiwan Semiconductor Corporation
DIODE ZENER 51V 1W DO204AL
BZD17C200P MQG
BZD17C200P MQG
Taiwan Semiconductor Corporation
DIODE ZENER 200V 800MW SUB SMA
2M170Z B0G
2M170Z B0G
Taiwan Semiconductor Corporation
DIODE ZENER 170V 2W DO204AC