MBRF1035HC0G

MBRF1035HC0G

Images are for reference only
See Product Specifications

MBRF1035HC0G
Описание:
DIODE SCHOTTKY 35V 10A ITO220AC
Упаковка:
Tube
Datasheet:
MBRF1035HC0G Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:MBRF1035HC0G
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Taiwan Semiconductor Corporation
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:aaa0376e51a49c9332dde4f69ea77455
Voltage - DC Reverse (Vr) (Max):cf18d9f135ea7e139baffdc7c76f0882
Current - Average Rectified (Io):600f6857f966a3ecb5ca3022150669c1
Voltage - Forward (Vf) (Max) @ If:363a3a640a0738f902de082772a48dda
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:30e0b9a03844b74c0224b615cc3d5ad1
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:1dd495d5dc873ac626fdae7730f9147f
Supplier Device Package:7ea579c277adc763ea1450ddd666bb34
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
1SS307(TE85L,F)
1SS307(TE85L,F)
Toshiba Semiconductor and Storage
DIODE GEN PURP 30V 100MA SMINI
SS1030HEWS-AU_R1_000A1
SS1030HEWS-AU_R1_000A1
Panjit International Inc.
SCHOTTKY BARRIER RECTIFIER
PSDP1560S1_T0_00001
PSDP1560S1_T0_00001
Panjit International Inc.
TO-220AC, FAST
VS-30BQ100HM3/9AT
VS-30BQ100HM3/9AT
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 3A DO214AB
SD103AW-13-F
SD103AW-13-F
Diodes Incorporated
DIODE SCHOTTKY 40V 350MA SOD123
PG5395_R2_00001
PG5395_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION PLASTI
ES1JWF-HF
ES1JWF-HF
Comchip Technology
RECTIFIER SUPER FAST RECOVERY 60
VS-85HFL40S02
VS-85HFL40S02
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 85A DO203AB
R9G00618XX
R9G00618XX
Powerex Inc.
DIODE GP 600V 1800A DO200AB
SSV1BAW56LT1G
SSV1BAW56LT1G
onsemi
RECTIFIER DIODE, 2 ELEMENT, 0.2A
ES1JF R3G
ES1JF R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SMA-FL
UG58G B0G
UG58G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 5A DO201AD
Вас также может заинтересовать
SMBJ14A
SMBJ14A
Taiwan Semiconductor Corporation
TVS DIODE 14VWM 23.2VC DO214AA
SMAJ64CAHR3G
SMAJ64CAHR3G
Taiwan Semiconductor Corporation
TVS DIODE 64VWM 103VC DO214AC
P4SMA27AH
P4SMA27AH
Taiwan Semiconductor Corporation
TVS DIODE 23.1VWM 37.5VC DO214AC
1.5KE220CA R0G
1.5KE220CA R0G
Taiwan Semiconductor Corporation
TVS DIODE 185VWM 328VC DO201
BZW04-19B B0G
BZW04-19B B0G
Taiwan Semiconductor Corporation
TVS DIODE 18.8VWM 30.6VC DO204AL
TS35P06GH
TS35P06GH
Taiwan Semiconductor Corporation
BRIDGE RECT 1P 800V 35A TS-6P
PU4DBH
PU4DBH
Taiwan Semiconductor Corporation
25NS, 4A, 200V, ULTRA FAST RECOV
MUR4L20
MUR4L20
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO201AD
BZT52C27-G RHG
BZT52C27-G RHG
Taiwan Semiconductor Corporation
DIODE ZENER 27V 350MW SOD123
BZD17C16P MHG
BZD17C16P MHG
Taiwan Semiconductor Corporation
DIODE ZENER 16V 800MW SUB SMA
BZV55C3V6 L1G
BZV55C3V6 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3.6V 500MW MINI MELF
TSM2328CX RFG
TSM2328CX RFG
Taiwan Semiconductor Corporation
MOSFET N-CH 100V 1.5A SOT23