RS2JAL

RS2JAL

Images are for reference only
See Product Specifications

RS2JAL
Описание:
250NS, 2A, 600V, FAST RECOVERY R
Упаковка:
Tape & Reel (TR)
Datasheet:
RS2JAL Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:RS2JAL
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Taiwan Semiconductor Corporation
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):9b63fe166715207d51445c226ada9c46
Current - Average Rectified (Io):08b823977c5354879aadc23a5a09301f
Voltage - Forward (Vf) (Max) @ If:c0cb31f8c50d993ae7097650b5281bfa
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):cd508e8f1eb8e22374611ffd20362842
Current - Reverse Leakage @ Vr:4b88d1c2cf26197f10a93c9fe12962bb
Capacitance @ Vr, F:89455366c85df1de4de8b0575c47a167
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:2f8fab3e62c8bee71cda4811d8cc4fa3
Supplier Device Package:6df4e85e4f7c4a789b8671a60e86ec60
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 2200
Stock:
2200 Can Ship Immediately
  • Делиться:
Для использования с
VBT3045BP-M3/4W
VBT3045BP-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30A 45V TO-263AB
DMA50I800HA
DMA50I800HA
IXYS
POWER DIODE DISCRETES-RECTIFIER
1N4245US
1N4245US
Microchip Technology
UFR,FRR
MNS1N6844U3
MNS1N6844U3
Microchip Technology
POWER SCHOTTKY
S2J/54
S2J/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1.5A DO214AA
SIDC38D60C6X1SA3
SIDC38D60C6X1SA3
Infineon Technologies
DIODE GEN PURP 600V 150A WAFER
AGP15-800HE3/54
AGP15-800HE3/54
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 800V 1.5A DO204
GP10MHM3/73
GP10MHM3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
JANTX1N6661US
JANTX1N6661US
Microchip Technology
DIODE GEN PURP 225V 500MA D5A
SR009H
SR009H
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 0.5A 90V DO-41
RF505TF6S
RF505TF6S
Rohm Semiconductor
DIODE GEN PURP 600V 5A TO220NFM
RB058L-30TE25
RB058L-30TE25
Rohm Semiconductor
DIODE SCHOTTKY 30V 3A PMDS
Вас также может заинтересовать
P4KE350AHA0G
P4KE350AHA0G
Taiwan Semiconductor Corporation
TVS DIODE 300VWM 482VC DO204AL
P4KE180AHB0G
P4KE180AHB0G
Taiwan Semiconductor Corporation
TVS DIODE 154VWM 246VC DO204AL
P6KE18AHB0G
P6KE18AHB0G
Taiwan Semiconductor Corporation
TVS DIODE 15.3VWM 25.5VC DO204AC
RS2AA R3G
RS2AA R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1.5A DO214AC
HS3K
HS3K
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 3A DO214AB
ES1BLHRHG
ES1BLHRHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A SUB SMA
SK85CHM6G
SK85CHM6G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 8A DO214AB
S1BLHRTG
S1BLHRTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A SUB SMA
MUR320SHR7G
MUR320SHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
ESH3B V7G
ESH3B V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
1PGSMB5946
1PGSMB5946
Taiwan Semiconductor Corporation
DIODE ZENER 75V 3W DO214AA
2M150ZHB0G
2M150ZHB0G
Taiwan Semiconductor Corporation
DIODE ZENER 150V 2W DO204AC