RS3M M6

RS3M M6

Images are for reference only
See Product Specifications

RS3M M6
Описание:
DIODE GENERAL PURPOSE DO214AB
Упаковка:
Tape & Reel (TR)
Datasheet:
RS3M M6 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:RS3M M6
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Taiwan Semiconductor Corporation
Упаковка:Tape & Reel (TR)
Product Status:ccbd814be8d73616679e7f5a64ce1cee
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):b912e8e9b12311ef3cd41c0d58a8ccc8
Current - Average Rectified (Io):657dae0913ee12be6fb2a6f687aae1c7
Voltage - Forward (Vf) (Max) @ If:89f708df6638aafd14a024cfd1115e89
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):ab714bc5f1e3b5a1b81174d7ba19915f
Current - Reverse Leakage @ Vr:d6b00d64e7844edb2c9218eb85ed0891
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:8ef62aefbb9b2ba59f468177b2ea4ee4
Supplier Device Package:f3d4bd62df5f2d5ba0f4e1be6af43919
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
GSD2004WS-HE3-08
GSD2004WS-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 240V 225MA SOD323
IDW40G65C5BXKSA2
IDW40G65C5BXKSA2
Infineon Technologies
DIODE SCHOTTKY 650V 20A TO247-3
DFLS230LQ-7
DFLS230LQ-7
Diodes Incorporated
DIODE SCHOTTKY 30V 2A POWERDI123
BAV21HWF-7
BAV21HWF-7
Diodes Incorporated
DIODE GP 200V 200MA SOD123F
SE07PD-M3/84A
SE07PD-M3/84A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 700MA DO220
VIT2060G-M3/4W
VIT2060G-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 10A TO262AA
UFS540G/TR13
UFS540G/TR13
Microchip Technology
DIODE GEN PURP 400V 5A DO215AB
UES806R
UES806R
Microchip Technology
RECTIFIER
GL34J/1
GL34J/1
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 500MA DO213
SS13L MHG
SS13L MHG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A SUB SMA
RSFKL RFG
RSFKL RFG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 500MA SUBSMA
RL1N4003
RL1N4003
Rectron USA
DIODE GEN PURP 1000V 1A A-405
Вас также может заинтересовать
1.5SMC200A M6G
1.5SMC200A M6G
Taiwan Semiconductor Corporation
TVS DIODE 171VWM 274VC DO214AB
SMDJ16CA M6G
SMDJ16CA M6G
Taiwan Semiconductor Corporation
TVS DIODE 16VWM 26VC DO214AB
SMAJ8.5CA R3G
SMAJ8.5CA R3G
Taiwan Semiconductor Corporation
TVS DIODE 8.5VWM 14.4VC DO214AC
SMCJ45 M6G
SMCJ45 M6G
Taiwan Semiconductor Corporation
TVS DIODE 1500W DO214AB SMC
1.5SMC10C R7G
1.5SMC10C R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB
SR106 A0G
SR106 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 1A DO204AL
SS14LHMQG
SS14LHMQG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 1A SUB SMA
FR102G A0G
FR102G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
SF1006GHC0G
SF1006GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 10A TO220AB
1N4936GHB0G
1N4936GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
SF34GHB0G
SF34GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO201AD
TSM680P06CH X0G
TSM680P06CH X0G
Taiwan Semiconductor Corporation
MOSFET P-CHANNEL 60V 18A TO251