S10JC M6

S10JC M6

Images are for reference only
See Product Specifications

S10JC M6
Описание:
DIODE SCHOTTKY DO214AB
Упаковка:
Tape & Reel (TR)
Datasheet:
S10JC M6 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:S10JC M6
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Taiwan Semiconductor Corporation
Упаковка:Tape & Reel (TR)
Product Status:ccbd814be8d73616679e7f5a64ce1cee
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):9b63fe166715207d51445c226ada9c46
Current - Average Rectified (Io):43432b246926e846623eba39bad99c8e
Voltage - Forward (Vf) (Max) @ If:1a2f43f3f47821e7900506002084e320
Speed:506dc4c3c6b37b60cdf6e54561f7a530
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:4b88d1c2cf26197f10a93c9fe12962bb
Capacitance @ Vr, F:37bb8e09d217746b5f64d8b4508e5e8a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:8ef62aefbb9b2ba59f468177b2ea4ee4
Supplier Device Package:f3d4bd62df5f2d5ba0f4e1be6af43919
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
RS1M_R1_00001
RS1M_R1_00001
Panjit International Inc.
SMA, FAST
SDURD860
SDURD860
SMC Diode Solutions
DIODE GEN PURP 600V DPAK
PG200_R2_00001
PG200_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION PLASTI
MBR680_T0_00001
MBR680_T0_00001
Panjit International Inc.
SCHOTTKY BARRIER RECTIFIERS
EGL41DHE3_A/I
EGL41DHE3_A/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO213AB
RH 1AV1
RH 1AV1
Sanken
DIODE GEN PURP 600V 600MA AXIAL
MBR7545
MBR7545
GeneSiC Semiconductor
DIODE SCHOTTKY 45V 75A DO5
G5S06508PT
G5S06508PT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 8A 2-PIN
BAS40LT1
BAS40LT1
onsemi
DIODE SCHOTTKY 40V SOT23
SIDC56D170E6X1SA1
SIDC56D170E6X1SA1
Infineon Technologies
DIODE GEN PURP 1.7KV 75A WAFER
EGP10D-E3/53
EGP10D-E3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AL
BYV95-1-EBT1111TAP
BYV95-1-EBT1111TAP
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 700V SOD57
Вас также может заинтересовать
SMBJ51CA
SMBJ51CA
Taiwan Semiconductor Corporation
TVS DIODE 51VWM 82.4VC DO214AA
SMAJ58CAHR3G
SMAJ58CAHR3G
Taiwan Semiconductor Corporation
TVS DIODE 58VWM 93.6VC DO214AC
1.5KE91CAH
1.5KE91CAH
Taiwan Semiconductor Corporation
TVS DIODE 77.8VWM 125VC DO201
P6SMB11CAHR5G
P6SMB11CAHR5G
Taiwan Semiconductor Corporation
TVS DIODE 9.4VWM 15.6VC DO214AA
P6KE43AHA0G
P6KE43AHA0G
Taiwan Semiconductor Corporation
TVS DIODE 36.8VWM 59.3VC DO204AC
PGSMAJ85AHM2G
PGSMAJ85AHM2G
Taiwan Semiconductor Corporation
TVS DIODE 85VWM 137VC DO214AC
1.5SMC120C M6
1.5SMC120C M6
Taiwan Semiconductor Corporation
TVS DIODE 1500W DO214AB SMC
1.5SMC56C R7
1.5SMC56C R7
Taiwan Semiconductor Corporation
TVS DIODE 1500W DO214AB SMC
KBP101G C2G
KBP101G C2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 50V 1A KBP
ES3G M6G
ES3G M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO214AB
BZT52C62K RKG
BZT52C62K RKG
Taiwan Semiconductor Corporation
DIODE ZENER 62V 200MW SOD523F
BZX85C6V8 A0G
BZX85C6V8 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 6.8V 1.3W DO204AL