SFAF1007GHC0G

SFAF1007GHC0G

Images are for reference only
See Product Specifications

SFAF1007GHC0G
Описание:
DIODE GEN PURP 500V 10A ITO220AC
Упаковка:
Tube
Datasheet:
SFAF1007GHC0G Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SFAF1007GHC0G
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Taiwan Semiconductor Corporation
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):53acc560d6ddad5708f13429566dcdb7
Current - Average Rectified (Io):600f6857f966a3ecb5ca3022150669c1
Voltage - Forward (Vf) (Max) @ If:b624027fd8b25f11c8e56782f07f0199
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):48dba8a956af0ff23e20e7f01121a45e
Current - Reverse Leakage @ Vr:811cbd6e57e4a3130f81a4e76e8ae416
Capacitance @ Vr, F:ff7e16ade7dfb8aca2aeccb4a27bcbf5
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:1dd495d5dc873ac626fdae7730f9147f
Supplier Device Package:7ea579c277adc763ea1450ddd666bb34
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
SBRD835LT4G-VF01
SBRD835LT4G-VF01
onsemi
SCHOTTKY BARRIER RECTIFIER
P3D12010G2
P3D12010G2
PN Junction Semiconductor
DIODE SCHOTTKY 1200V 10A TO263-2
VS-6EVL06-M3/I
VS-6EVL06-M3/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE 600V SLIMDPAK
SD103AWS-HG3-18
SD103AWS-HG3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 350MA SOD323
SSB43LHM3_A/H
SSB43LHM3_A/H
Vishay General Semiconductor - Diodes Division
4A 30V SM SCHOTTKY RECT SMB
EU01Z
EU01Z
Sanken
DIODE GEN PURP 200V 250MA AXIAL
SL42HE3_B/H
SL42HE3_B/H
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 20V 4A DO214AB
DMA10IM1600PZ-TRL
DMA10IM1600PZ-TRL
IXYS
POWER DIODE DISCRETES-RECTIFIER
1N4530
1N4530
Microchip Technology
STANDARD RECTIFIER
SDH5KS
SDH5KS
Semtech Corporation
DIODE GEN PURP 5KV 2.5A MODULE
1N457ATR
1N457ATR
onsemi
1N457 - HIGH CONDUCTANCE LOW LEA
RB068MM100TFTR
RB068MM100TFTR
Rohm Semiconductor
DIODE SCHOTTKY 100V 2A PMDU
Вас также может заинтересовать
1.5KE56AH
1.5KE56AH
Taiwan Semiconductor Corporation
TVS DIODE 47.8VWM 77VC DO201
SMDJ43AH
SMDJ43AH
Taiwan Semiconductor Corporation
TVS DIODE 43VWM 69.4VC DO214AB
1.5SMC11A R6G
1.5SMC11A R6G
Taiwan Semiconductor Corporation
TVS DIODE 1500W DO214AB SMC
SMCJ90CA M6
SMCJ90CA M6
Taiwan Semiconductor Corporation
TVS DIODE 1500W DO214AB SMC
SA6.0CAH
SA6.0CAH
Taiwan Semiconductor Corporation
TVS 500W 7V 5% DO-15
SA6.0AH
SA6.0AH
Taiwan Semiconductor Corporation
TVS 500W 7V 5% DO-15
TS6P01G D2G
TS6P01G D2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 50V 6A TS-6P
S2JFS
S2JFS
Taiwan Semiconductor Corporation
2A, 600V, STANDARD RECOVERY RECT
SRT13 R0G
SRT13 R0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A TS-1
RS3KHM6G
RS3KHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 3A DO214AB
SF31G A0G
SF31G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO201AD
2M16Z B0G
2M16Z B0G
Taiwan Semiconductor Corporation
DIODE ZENER 16V 2W DO204AC