SFAF806G

SFAF806G

Images are for reference only
See Product Specifications

SFAF806G
Описание:
DIODE GEN PURP 400V 8A ITO220AC
Упаковка:
Tube
Datasheet:
SFAF806G Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SFAF806G
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Taiwan Semiconductor Corporation
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):a51e6c3b115ead349deb13cbf5a43f23
Current - Average Rectified (Io):aef4533582e3b78f1bc369aaf4ae62ba
Voltage - Forward (Vf) (Max) @ If:f963e259918ac307cd10710f771de357
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):48dba8a956af0ff23e20e7f01121a45e
Current - Reverse Leakage @ Vr:a449e40de3360023c1f39414900fb124
Capacitance @ Vr, F:37bb8e09d217746b5f64d8b4508e5e8a
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:1dd495d5dc873ac626fdae7730f9147f
Supplier Device Package:7ea579c277adc763ea1450ddd666bb34
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
FFPF08H60STU
FFPF08H60STU
onsemi
DIODE GEN PURP 600V 8A TO220F-2L
S5MHE3_A/I
S5MHE3_A/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 5A DO214AB
BD890YS_S2_00001
BD890YS_S2_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
V8PM45-M3/I
V8PM45-M3/I
Vishay General Semiconductor - Diodes Division
RECTIFIER BARRIER SCHOTTKY TO-27
JAN1N4150-1/TR
JAN1N4150-1/TR
Microchip Technology
SIGNAL/COMPUTER DIODE
VS-60APH03L-N3
VS-60APH03L-N3
Vishay General Semiconductor - Diodes Division
DIODE GP 300V 60A TO247AD-3
RS2MA-13
RS2MA-13
Diodes Incorporated
DIODE GEN PURP 1KV 1.5A SMA
SBRD8320T4G
SBRD8320T4G
onsemi
DIODE SCHOTTKY 20V 3A DPAK
SBR05U40CSP-7
SBR05U40CSP-7
Diodes Incorporated
DIODE SBR 40V 500MA WLB1006
FR307-TP
FR307-TP
Micro Commercial Co
DIODE GEN PURP 1KV 3A DO201AD
RSFGLHRHG
RSFGLHRHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 500MA SUBSMA
ES2A R5G
ES2A R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 2A DO214AA
Вас также может заинтересовать
P4SMA82AH
P4SMA82AH
Taiwan Semiconductor Corporation
TVS DIODE 70.1VWM 113VC DO214AC
SMCJ22CAH
SMCJ22CAH
Taiwan Semiconductor Corporation
TVS DIODE 22VWM 35.5VC DO214AB
P6KE150A R0G
P6KE150A R0G
Taiwan Semiconductor Corporation
TVS DIODE 128VWM 207VC DO204AC
SMCJ70C R6
SMCJ70C R6
Taiwan Semiconductor Corporation
TVS DIODE 1500W DO214AB SMC
ES3G V7G
ES3G V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO214AB
UGS20JH
UGS20JH
Taiwan Semiconductor Corporation
50NS, 20A, 600V, HIGH EFFICIENT
S5K M6G
S5K M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 5A DO214AB
SK26AHR3G
SK26AHR3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 2A DO214AC
S1JR2
S1JR2
Taiwan Semiconductor Corporation
1A, 600V, GLASS PASSIVATED SMD R
BZD27C33P MQG
BZD27C33P MQG
Taiwan Semiconductor Corporation
DIODE ZENER 33V 1W SUB SMA
1SMB5956 R5G
1SMB5956 R5G
Taiwan Semiconductor Corporation
DIODE ZENER 200V 3W DO214AA
1N4744A B0G
1N4744A B0G
Taiwan Semiconductor Corporation
DIODE ZENER 15V 1W DO204AL