SK52C R7G

SK52C R7G

Images are for reference only
See Product Specifications

SK52C R7G
Описание:
DIODE SCHOTTKY 20V 5A DO214AB
Упаковка:
Tape & Reel (TR)
Datasheet:
SK52C R7G Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SK52C R7G
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Taiwan Semiconductor Corporation
Упаковка:Tape & Reel (TR)
Product Status:ccbd814be8d73616679e7f5a64ce1cee
Diode Type:aaa0376e51a49c9332dde4f69ea77455
Voltage - DC Reverse (Vr) (Max):1d4b1d1d0414ed964cb9de7f5a150f63
Current - Average Rectified (Io):4dd8e57bba533ac70e32f1b72e65943c
Voltage - Forward (Vf) (Max) @ If:c13e0f972f66bd9ae0edd8aab0f2c710
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:5132cc7d6864fbfebafd97ca6e1915d4
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:8ef62aefbb9b2ba59f468177b2ea4ee4
Supplier Device Package:f3d4bd62df5f2d5ba0f4e1be6af43919
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
HS1KL RVG
HS1KL RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A SUB SMA
UF1010G_R2_00001
UF1010G_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION ULTRAF
PMEG3010CEH,115
PMEG3010CEH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1A SOD123F
BYG24GHE3_A/H
BYG24GHE3_A/H
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 400V 1.5A DO214
AR1PGHM3/85A
AR1PGHM3/85A
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 400V 1A DO220AA
1N4384GP-E3/54
1N4384GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AC
VS-30WQ04FNTRL-M3
VS-30WQ04FNTRL-M3
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY DPAK
BYT52K-TR
BYT52K-TR
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 800V 1.4A SOD57
1N2137A
1N2137A
GeneSiC Semiconductor
DIODE GEN PURP 500V 60A DO5
EGP30F-E3/73
EGP30F-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 300V 3A GP20
RGP10DE-052E3/91
RGP10DE-052E3/91
Vishay General Semiconductor - Diodes Division
RECTIFIER
MSASC25H60K/TR
MSASC25H60K/TR
Microchip Technology
POWER SCHOTTKY
Вас также может заинтересовать
P4SMA39A R3G
P4SMA39A R3G
Taiwan Semiconductor Corporation
TVS DIODE 33.3VWM 53.9VC DO214AC
1.5SMC39CAHM6G
1.5SMC39CAHM6G
Taiwan Semiconductor Corporation
TVS DIODE 33.3VWM 53.9VC DO214AB
SMBJ64AHR5G
SMBJ64AHR5G
Taiwan Semiconductor Corporation
TVS DIODE 64VWM 103VC DO214AA
P4KE27AHB0G
P4KE27AHB0G
Taiwan Semiconductor Corporation
TVS DIODE 23.1VWM 37.5VC DO204AL
SA22CAHB0G
SA22CAHB0G
Taiwan Semiconductor Corporation
TVS DIODE 22VWM 46.6VC DO204AC
GBU15L05
GBU15L05
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 600V 15A GBU
KBU601G T0
KBU601G T0
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 50V 6A KBU
S3GHR7G
S3GHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO214AB
BZD27C15P RVG
BZD27C15P RVG
Taiwan Semiconductor Corporation
DIODE ZENER 14.7V 1W SUB SMA
BZD27C7V5PHRHG
BZD27C7V5PHRHG
Taiwan Semiconductor Corporation
DIODE ZENER 7.45V 1W SUB SMA
BZT52C27S RRG
BZT52C27S RRG
Taiwan Semiconductor Corporation
DIODE ZENER 27V 200MW SOD323F
TSM70N900CH C5G
TSM70N900CH C5G
Taiwan Semiconductor Corporation
MOSFET N-CH 700V 4.5A TO251