SMDJ30CAHR7G

SMDJ30CAHR7G

Images are for reference only
See Product Specifications

SMDJ30CAHR7G
Описание:
TVS DIODE 30VWM 48.4VC DO214AB
Упаковка:
Tape & Reel (TR)
Datasheet:
SMDJ30CAHR7G Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SMDJ30CAHR7G
Категория:Circuit Protection
Подкатегория:TVS - Diodes
Производитель:Taiwan Semiconductor Corporation
Упаковка:Tape & Reel (TR)
Product Status:ccbd814be8d73616679e7f5a64ce1cee
Type:96d9445f264df80066fd6309ac4f27c0
Unidirectional Channels:336d5ebc5436534e61d16e63ddfca327
Bidirectional Channels:c4ca4238a0b923820dcc509a6f75849b
Voltage - Reverse Standoff (Typ):9ec92e92d0efca44e7ef022a61c49068
Voltage - Breakdown (Min):6412b57320814f6ae77b5607d8aded62
Voltage - Clamping (Max) @ Ipp:590e43f103a1b3b6b06ef1b22a7a0670
Current - Peak Pulse (10/1000µs):296b907c9c33fea939f7d2f881696cd6
Power - Peak Pulse:4ff2516ea45c2bd3a0153acc9875b8bc
Power Line Protection:bafd7322c6e97d25b6299b5d6fe8920b
Applications:b88033354e42b423efaefbcc5649ddb9
Capacitance @ Frequency:336d5ebc5436534e61d16e63ddfca327
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:8ef62aefbb9b2ba59f468177b2ea4ee4
Supplier Device Package:f3d4bd62df5f2d5ba0f4e1be6af43919
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
SZTVS4201MR6T1G
SZTVS4201MR6T1G
onsemi
TVS DIODE 5VWM 12VC 6TSOP
GSOT04-E3-08
GSOT04-E3-08
Vishay General Semiconductor - Diodes Division
TVS DIODE 4VWM 14.3VC SOT23-3
UCLAMP2482PWQ.C
UCLAMP2482PWQ.C
Semtech Corporation
4V ESD AND EOS PROTECTION FOR 2-
SMBJ8.5CE3/TR13
SMBJ8.5CE3/TR13
Microchip Technology
TVS DIODE 8.5VWM 15.9VC SMBJ
1.5KE62A-B
1.5KE62A-B
Littelfuse Inc.
TVS DIODE 53VWM 85VC DO201
1.5SMC68CAHE3_A/H
1.5SMC68CAHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC SMC
SMLJ64CE3/TR13
SMLJ64CE3/TR13
Microchip Technology
TVS DIODE 64VWM 114VC DO214AB
15KPE180A
15KPE180A
Eaton - Electronics Division
TVS DIODE 180VWM 288.5VC AXIAL
MXSMLJ100CA/TR
MXSMLJ100CA/TR
Microchip Technology
TVS 100V 5% 3000W BI
JANS1N6110
JANS1N6110
Microchip Technology
TVS DIODE 11.4VWM 22.05VC AXIAL
PGSMAJ7.5CA E3G
PGSMAJ7.5CA E3G
Taiwan Semiconductor Corporation
TVS DIODE 7.5VWM 12.9VC DO214AC
SMBJ17CAHM3/H
SMBJ17CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 17VWM 27.6VC DO214AA
Вас также может заинтересовать
SMA6J12AHR3G
SMA6J12AHR3G
Taiwan Semiconductor Corporation
TVS DIODE 12VWM 18.8VC DO214AC
1.5SMC150CAH
1.5SMC150CAH
Taiwan Semiconductor Corporation
TVS DIODE 128VWM 207VC DO214AB
DBLS107GHC1G
DBLS107GHC1G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 1KV 1A DBLS
GBU1002HD2G
GBU1002HD2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 100V 10A GBU
SSL13H
SSL13H
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A DO214AC
MUR420S M6G
MUR420S M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO214AB
MBR1690HC0G
MBR1690HC0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 16A TO220AC
SFA807GHC0G
SFA807GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 8A TO220AC
SF23GH
SF23GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 2A DO204AC
BZT52C16 RHG
BZT52C16 RHG
Taiwan Semiconductor Corporation
DIODE ZENER 16V 500MW SOD123F
2M120Z
2M120Z
Taiwan Semiconductor Corporation
DIODE ZENER 120V 2W DO204AC
BZD27C130P M2G
BZD27C130P M2G
Taiwan Semiconductor Corporation
DIODE ZENER 132.5V 1W SUB SMA