SRAS850 MNG

SRAS850 MNG

Images are for reference only
See Product Specifications

SRAS850 MNG
Описание:
DIODE SCHOTTKY 50V 8A TO263AB
Упаковка:
Tape & Reel (TR)
Datasheet:
SRAS850 MNG Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SRAS850 MNG
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Taiwan Semiconductor Corporation
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:aaa0376e51a49c9332dde4f69ea77455
Voltage - DC Reverse (Vr) (Max):1c53213259cb70ca6e36d7a9c97e7231
Current - Average Rectified (Io):aef4533582e3b78f1bc369aaf4ae62ba
Voltage - Forward (Vf) (Max) @ If:53e063c6f9f5e8c685393663aadc4664
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:99d70b023925d7e1f9e6d771c74c3dfb
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:99446f4470b43888d0c78d7d2cdfc956
Supplier Device Package:c1651030b5e959c4697991550f73f503
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
PMEG3020EGW,115
PMEG3020EGW,115
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY, 1 PHA
STPSC4H065DI
STPSC4H065DI
STMicroelectronics
DIODE SCHOTTKY 650V 4A TO220AC
UG1B-M3/54
UG1B-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO204AL
SBR545SAFQ-13
SBR545SAFQ-13
Diodes Incorporated
SCHOTTKY RECTIFIER SMAF T&R 10K
SK53BH
SK53BH
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 5A DO214AA
1N457A/TR
1N457A/TR
Microchip Technology
SIGNAL OR COMPUTER DIODE
1N4151_T50R
1N4151_T50R
onsemi
DIODE GEN PURP 75V 150MA DO35
SL42HE3/9AT
SL42HE3/9AT
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 20V 4A DO214AB
ES1PCHE3/84A
ES1PCHE3/84A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 1A DO220AA
1N5821-B
1N5821-B
Diodes Incorporated
DIODE SCHOTTKY 30V 3A DO201AD
TVR10G-M3/54
TVR10G-M3/54
Vishay General Semiconductor - Diodes Division
DIODE 1A 400V DO-204
D770N18TXPSA1
D770N18TXPSA1
Infineon Technologies
DIODE GEN PURP 1.8KV 770A
Вас также может заинтересовать
SMBJ12AH
SMBJ12AH
Taiwan Semiconductor Corporation
TVS DIODE 12VWM 19.9VC DO214AA
1.5SMC16CAH
1.5SMC16CAH
Taiwan Semiconductor Corporation
TVS DIODE 13.6VWM 22.5VC DO214AB
P4KE51A R1G
P4KE51A R1G
Taiwan Semiconductor Corporation
TVS DIODE 43.6VWM 70.1VC DO204AL
1KSMB56A R5G
1KSMB56A R5G
Taiwan Semiconductor Corporation
TVS DIODE 47.8VWM 77VC DO214AA
PGSMAJ7.5A R2G
PGSMAJ7.5A R2G
Taiwan Semiconductor Corporation
TVS DIODE 7.5VWM 12.9VC DO214AC
SMCJ15C M6
SMCJ15C M6
Taiwan Semiconductor Corporation
TVS DIODE 1500W DO214AB SMC
DBLS103GHRDG
DBLS103GHRDG
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 200V 1A DBLS
S4G M6G
S4G M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 4A DO214AB
RS1KHR3G
RS1KHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A DO214AC
BZD27C13P MHG
BZD27C13P MHG
Taiwan Semiconductor Corporation
DIODE ZENER 13.25V 1W SUB SMA
1N4761A A0G
1N4761A A0G
Taiwan Semiconductor Corporation
DIODE ZENER 75V 1W DO204AL
TSM2N7000KCT A3G
TSM2N7000KCT A3G
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 60V 300MA TO92