SS310 R7

SS310 R7

Images are for reference only
See Product Specifications

SS310 R7
Описание:
DIODE SCHOTTKY DO214AB
Упаковка:
Tape & Reel (TR)
Datasheet:
SS310 R7 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SS310 R7
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Taiwan Semiconductor Corporation
Упаковка:Tape & Reel (TR)
Product Status:ccbd814be8d73616679e7f5a64ce1cee
Diode Type:aaa0376e51a49c9332dde4f69ea77455
Voltage - DC Reverse (Vr) (Max):227b5c7c7a2ed2ea3da210ed0860030d
Current - Average Rectified (Io):ab6530c3ddf4bf1f01b0d114af449a1b
Voltage - Forward (Vf) (Max) @ If:8d2c47bb6de5f6e5168dfe9b08a02532
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:1351b5764c7d45cacbd5dba72dd9ff87
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:8ef62aefbb9b2ba59f468177b2ea4ee4
Supplier Device Package:f3d4bd62df5f2d5ba0f4e1be6af43919
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
1N649-1
1N649-1
Microchip Technology
DIODE GEN PURP 600V 400MA DO35
RURG8080
RURG8080
Harris Corporation
RECTIFIER DIODE
GS1MWG_R1_00001
GS1MWG_R1_00001
Panjit International Inc.
SURFACE MOUNT GENERAL PURPOSE RE
DSEI30-12A
DSEI30-12A
IXYS
DIODE GEN PURP 1.2KV 26A TO247AD
VS-50WQ03FNTRHM3
VS-50WQ03FNTRHM3
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 5.5A DPAK
DSEP6-06AS-TUB
DSEP6-06AS-TUB
IXYS
POWER DIODE DISCRETES-FRED TO-25
VS-307UA250P4
VS-307UA250P4
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 2.5KV 300A DO9
STTH8006W
STTH8006W
STMicroelectronics
DIODE GEN PURP 600V 80A DO247
JAN1N647-1
JAN1N647-1
Microchip Technology
DIODE GEN PURP 400V 400MA DO35
1N5397GHA0G
1N5397GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1.5A DO204AC
MBR7150 C0G
MBR7150 C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 7.5A TO220AC
EGF1CHE3_A/I
EGF1CHE3_A/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 1A DO214BA
Вас также может заинтересовать
SMAJ28AHR3G
SMAJ28AHR3G
Taiwan Semiconductor Corporation
TVS DIODE 28VWM 45.4VC DO214AC
P6KE75CAH
P6KE75CAH
Taiwan Semiconductor Corporation
TVS DIODE 64.1VWM 103VC DO204AC
P4KE150CAHA0G
P4KE150CAHA0G
Taiwan Semiconductor Corporation
TVS DIODE 128VWM 207VC DO204AL
P4KE22CA A0G
P4KE22CA A0G
Taiwan Semiconductor Corporation
TVS DIODE 18.8VWM 30.6VC DO204AL
PGSMAJ43CAHF4G
PGSMAJ43CAHF4G
Taiwan Semiconductor Corporation
TVS DIODE 43VWM 69.4VC DO214AC
TS10K40-A
TS10K40-A
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 400V 10A TS4K
S2B M4G
S2B M4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 2A DO214AA
ES1LG R3G
ES1LG R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO214AC
SS25LHRUG
SS25LHRUG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 2A SUB SMA
BZD27C22P R3G
BZD27C22P R3G
Taiwan Semiconductor Corporation
DIODE ZENER 22.05V 1W SUB SMA
BZD27C39P M2G
BZD27C39P M2G
Taiwan Semiconductor Corporation
DIODE ZENER 39V 1W SUB SMA
BZT52B4V3S RRG
BZT52B4V3S RRG
Taiwan Semiconductor Corporation
DIODE ZENER 4.3V 200MW SOD323F