TQM033NB04CR RLG

TQM033NB04CR RLG

Images are for reference only
See Product Specifications

TQM033NB04CR RLG
Описание:
MOSFET N-CH 40V 21A/121A PDFN56U
Упаковка:
Tape & Reel (TR)
Datasheet:
TQM033NB04CR RLG Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:TQM033NB04CR RLG
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Taiwan Semiconductor Corporation
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):628cbc3e45d5bacb32414a526acf56ef
Current - Continuous Drain (Id) @ 25°C:f89cef59a81faebf2778c9a8dee957a3
Drive Voltage (Max Rds On, Min Rds On):0b6ab86230b092822a85075e85bfbb5a
Rds On (Max) @ Id, Vgs:716442e2ccaa4b2e6bd2934e532ca917
Vgs(th) (Max) @ Id:49290fad653d58ec891aaab4b2c0f7cc
Gate Charge (Qg) (Max) @ Vgs:74a6448a896a88502ae078c451cdbfee
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:87923c6e48e38ab9b6b1c3e927ae9337
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):65e0002c855f3fa8b8dcff0f2d54b648
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:19594f10b77d3a5cc29d4f900f7ee637
Supplier Device Package:0e5e63a18e938f43ad9f73fc0d333563
Package / Case:7f82de9f5c66f9f803bc2f6ee2b90c1b
In Stock: 4845
Stock:
4845 Can Ship Immediately
  • Делиться:
Для использования с
2SK1400A-E
2SK1400A-E
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
IRF9Z34STRRPBF
IRF9Z34STRRPBF
Vishay Siliconix
MOSFET P-CH 60V 18A D2PAK
IPD122N10N3GATMA1
IPD122N10N3GATMA1
Infineon Technologies
MOSFET N-CH 100V 59A TO252-3
APTM100UM45DAG
APTM100UM45DAG
Microchip Technology
MOSFET N-CH 1000V 215A SP6
SI2304BDS-T1-BE3
SI2304BDS-T1-BE3
Vishay Siliconix
N-CHANNEL 30-V (D-S) MOSFET
NTMFS4C760NT1G
NTMFS4C760NT1G
onsemi
MOSFET N-CH 30V 46A SO8FL
IXTP27N20T
IXTP27N20T
IXYS
MOSFET N-CH 200V 27A TO220AB
IRF7459TRPBF
IRF7459TRPBF
Infineon Technologies
MOSFET N-CH 20V 12A 8SO
TPC6012(TE85L,F,M)
TPC6012(TE85L,F,M)
Toshiba Semiconductor and Storage
MOSFET N-CH 20V 6A VS-6
APT50MC120JCU2
APT50MC120JCU2
Microchip Technology
MOSFET N-CH 1200V 71A SOT227
AON6748_102
AON6748_102
Alpha & Omega Semiconductor Inc.
MOSFET N-CH DFN
RDX050N50FU6
RDX050N50FU6
Rohm Semiconductor
MOSFET N-CH 500V 5A TO220FM
Вас также может заинтересовать
SMDJ13A R7G
SMDJ13A R7G
Taiwan Semiconductor Corporation
TVS DIODE 13VWM 21.5VC DO214AB
1.5KE51A B0G
1.5KE51A B0G
Taiwan Semiconductor Corporation
TVS DIODE 43.6VWM 70.1VC DO201
DBL103GHC1G
DBL103GHC1G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 200V 1A DBL
TS10K40 D3G
TS10K40 D3G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 400V 10A TS4K
HS1GFS
HS1GFS
Taiwan Semiconductor Corporation
50NS, 1A, 400V, HIGH EFFICIENT R
S1KFSH
S1KFSH
Taiwan Semiconductor Corporation
DIODE, 1A, 800V, AEC-Q101, SOD-1
SS320H
SS320H
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
SR804
SR804
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 8A DO201AD
HS1KL M2G
HS1KL M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A SUB SMA
1N5407GHA0G
1N5407GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 3A DO201AD
HER152G B0G
HER152G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1.5A DO204AC
TS7808CZ C0G
TS7808CZ C0G
Taiwan Semiconductor Corporation
IC REG LINEAR 8V 1A TO220