Logo Logo
0
Мой запрос предложений
English


TS25P06G-K C2G

TS25P06G-K C2G

Images are for reference only
See Product Specifications

TS25P06G-K C2G
Mfr.:
Описание:
BRIDGE RECT 1P 800V 25A TS-6P
Упаковка:
Tube
Datasheet:
TS25P06G-K C2G Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:TS25P06G-K C2G
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Bridge Rectifiers
Производитель:Taiwan Semiconductor Corporation
Упаковка:Tube
Product Status:ec30c235d0eb792797af1aa1d11759a7
Diode Type:04d59a4f67a72cfc8a6f8046b91ff693
Technology:eb6d8ae6f20283755b339c0dc273988b
Voltage - Peak Reverse (Max):faca79d8bea430c6302af6f2e2f59d12
Current - Average Rectified (Io):33a395e98b397699d016c1ff66f08018
Voltage - Forward (Vf) (Max) @ If:986d43eea24f5b3d64d4399fbb69f7c7
Current - Reverse Leakage @ Vr:8f69ba4025902c0d85e983ab66d2be80
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:dbd5e4054ddf585ddd07117502897aa0
Supplier Device Package:dd9e42ac98abbecc8f441048cf414e60
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
GBPC3510W
GBPC3510W
GeneSiC Semiconductor
BRIDGE RECT 1P 1KV 35A GBPC-W
DXK310_T0_00001
DXK310_T0_00001
Panjit International Inc.
DXK,GLASS PASSIVATED BRIDGE RECT
BR1010
BR1010
EIC SEMICONDUCTOR INC.
STD 10A, CASE TYPE: BR10
BR2504
BR2504
EIC SEMICONDUCTOR INC.
STD 25A, CASE TYPE: BR50
GBPC3508-E4/51
GBPC3508-E4/51
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 800V 35A GBPC
GBJ2508-LS
GBJ2508-LS
Diodes Incorporated
MEDIUM/HIGH POWER BRIDGE GBJ TUB
BU1010A-E3/45
BU1010A-E3/45
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1P 1KV 3A BU
RS103M
RS103M
Rectron USA
BRIDGE RECT GLASS 200V 1A RS-1M
MB252W-BP
MB252W-BP
Micro Commercial Co
BRIDGE RECT 1P 200V 25A MB-35W
KBP307G C2G
KBP307G C2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 1KV 3A KBP
G3SBA60L-6000M3/51
G3SBA60L-6000M3/51
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 600V 2.3A GBU
GBU8JL-7000E3/45
GBU8JL-7000E3/45
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 600V 3.9A GBU
Вас также может заинтересовать
1.5KE20CA R0G
1.5KE20CA R0G
Taiwan Semiconductor Corporation
TVS DIODE 17.1VWM 27.7VC DO201
SMDJ51CA R7G
SMDJ51CA R7G
Taiwan Semiconductor Corporation
TVS DIODE 51VWM 82.4VC DO214AB
PGSMAJ6.5A R2G
PGSMAJ6.5A R2G
Taiwan Semiconductor Corporation
TVS DIODE 6.5VWM 11.2VC DO214AC
PGSMAJ64AHF4G
PGSMAJ64AHF4G
Taiwan Semiconductor Corporation
TVS DIODE 64VWM 103VC DO214AC
1.5SMC16CA R6
1.5SMC16CA R6
Taiwan Semiconductor Corporation
TVS DIODE 3000W DO214AB SMC
SMCJ150CA R6G
SMCJ150CA R6G
Taiwan Semiconductor Corporation
TVS DIODE 1500W DO214AB SMC
1.5SMC11C M6
1.5SMC11C M6
Taiwan Semiconductor Corporation
TVS DIODE 1500W DO214AB SMC
TSPB15U100S
TSPB15U100S
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 15A SMPC4.0
TSN525M60HS4G
TSN525M60HS4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 60V 25A 8PDFN
TSZU52C27 RGG
TSZU52C27 RGG
Taiwan Semiconductor Corporation
DIODE ZENER 27V 150MW 0603
TSM900N10CH X0G
TSM900N10CH X0G
Taiwan Semiconductor Corporation
MOSFET N-CH 100V 15A TO251
TS317CZ C0G
TS317CZ C0G
Taiwan Semiconductor Corporation
IC REG LINEAR POS ADJ 1.5A TO220