TS25P06G-K D2G

TS25P06G-K D2G

Images are for reference only
See Product Specifications

TS25P06G-K D2G
Описание:
BRIDGE RECT 1P 800V 25A TS-6P
Упаковка:
Tube
Datasheet:
TS25P06G-K D2G Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:TS25P06G-K D2G
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Bridge Rectifiers
Производитель:Taiwan Semiconductor Corporation
Упаковка:Tube
Product Status:ec30c235d0eb792797af1aa1d11759a7
Diode Type:04d59a4f67a72cfc8a6f8046b91ff693
Technology:eb6d8ae6f20283755b339c0dc273988b
Voltage - Peak Reverse (Max):faca79d8bea430c6302af6f2e2f59d12
Current - Average Rectified (Io):33a395e98b397699d016c1ff66f08018
Voltage - Forward (Vf) (Max) @ If:986d43eea24f5b3d64d4399fbb69f7c7
Current - Reverse Leakage @ Vr:8f69ba4025902c0d85e983ab66d2be80
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:dbd5e4054ddf585ddd07117502897aa0
Supplier Device Package:dd9e42ac98abbecc8f441048cf414e60
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
DB104S-G
DB104S-G
Comchip Technology
BRIDGE RECT 1PHASE 400V 1A DBS
CS50S
CS50S
Diotec Semiconductor
1PH BRIDGE DIL 100V 1A
BR610
BR610
EIC SEMICONDUCTOR INC.
STD 6A, CASE TYPE: BR6
BR2501
BR2501
EIC SEMICONDUCTOR INC.
STD 25A, CASE TYPE: BR50
BR5010
BR5010
EIC SEMICONDUCTOR INC.
STD 50A, CASE TYPE: BR50
GBU4K-E3/51
GBU4K-E3/51
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 800V 3A GBU
CDBHM180L-HF
CDBHM180L-HF
Comchip Technology
BRIDGE RECT 1PHASE 80V 1A MBS
GBJ2502-03-G
GBJ2502-03-G
Comchip Technology
BRIDGE RECT 1PHASE 200V 25A GBJ
TS35P07GH
TS35P07GH
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 1KV 35A TS-6P
KBL603G
KBL603G
GeneSiC Semiconductor
BRIDGE RECT 1PHASE 200V 6A KBL
CBR10A-J080
CBR10A-J080
Central Semiconductor Corp
BRIDGE RECT 1PHASE 800V 10A CM
CBR35-020PW
CBR35-020PW
Central Semiconductor Corp
BRIDGE RECT 1P 200V 4CASE FPW
Вас также может заинтересовать
1.5SMC150CAHR7G
1.5SMC150CAHR7G
Taiwan Semiconductor Corporation
TVS DIODE 128VWM 207VC DO214AB
PGSMAJ43A M2G
PGSMAJ43A M2G
Taiwan Semiconductor Corporation
TVS DIODE 43VWM 69.4VC DO214AC
SMCJ20 R7
SMCJ20 R7
Taiwan Semiconductor Corporation
TVS DIODE 1500W DO214AB SMC
1.5SMC75 R7
1.5SMC75 R7
Taiwan Semiconductor Corporation
TVS DIODE 1500W DO214AB SMC
GBU801H
GBU801H
Taiwan Semiconductor Corporation
DIODE BRIDGE 8A 50V GBU
SF23G R0G
SF23G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 2A DO204AC
MUR840HC0G
MUR840HC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 8A TO220AC
1N4006GHB0G
1N4006GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A DO204AL
BZD27C150PHMHG
BZD27C150PHMHG
Taiwan Semiconductor Corporation
DIODE ZENER 147V 1W SUB SMA
1SMC5352 R7G
1SMC5352 R7G
Taiwan Semiconductor Corporation
DIODE ZENER 15V 5W DO214AB
TSM2301ACX RFG
TSM2301ACX RFG
Taiwan Semiconductor Corporation
MOSFET P-CHANNEL 20V 2.8A SOT23
TSM850N06CX RFG
TSM850N06CX RFG
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 60V 3A SOT23