TS8P05GHC2G

TS8P05GHC2G

Images are for reference only
See Product Specifications

TS8P05GHC2G
Описание:
BRIDGE RECT 1PHASE 600V 8A TS-6P
Упаковка:
Tube
Datasheet:
TS8P05GHC2G Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:TS8P05GHC2G
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Bridge Rectifiers
Производитель:Taiwan Semiconductor Corporation
Упаковка:Tube
Product Status:ccbd814be8d73616679e7f5a64ce1cee
Diode Type:04d59a4f67a72cfc8a6f8046b91ff693
Technology:eb6d8ae6f20283755b339c0dc273988b
Voltage - Peak Reverse (Max):9b63fe166715207d51445c226ada9c46
Current - Average Rectified (Io):f8cc56260823e63e891e80728bae51e6
Voltage - Forward (Vf) (Max) @ If:c861b5210be6b6a8997117f01b10bef7
Current - Reverse Leakage @ Vr:cd08854385deda7826cbcc335b36c2dc
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:dbd5e4054ddf585ddd07117502897aa0
Supplier Device Package:dd9e42ac98abbecc8f441048cf414e60
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
BAS3007ARPPE6327HTSA1
BAS3007ARPPE6327HTSA1
Infineon Technologies
BRIDGE RECT 1P 30V 900A SOT143-4
GBU6K
GBU6K
onsemi
BRIDGE RECT 1PHASE 800V 6A GBU
DF04S-E3/45
DF04S-E3/45
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 400V 1A DFS
DBLS102G
DBLS102G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 100V 1A DBLS
GBJ3501
GBJ3501
SMC Diode Solutions
BRIDGE RECT 1PHASE 100V 35A GBJ
1N4436S
1N4436S
Microchip Technology
STD RECTIFIER
D10JB100-B1-0000
D10JB100-B1-0000
Yangzhou Yangjie Electronic Technology Co.,Ltd
RECT BRIDGE 1000V 10A JB
MB252
MB252
Diodes Incorporated
BRIDGE RECT 1PHASE 200V 25A MB
3N249-E4/51
3N249-E4/51
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1P 400V 1.5A KBPM
MSDM50-08
MSDM50-08
Microsemi Corporation
BRIDGE RECT 3PHASE 800V 50A M2-1
TS8P02G D2G
TS8P02G D2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 100V 8A TS-6P
GBLA02-M3/51
GBLA02-M3/51
Vishay General Semiconductor - Diodes Division
DIODE BRIDGE 200V GBL
Вас также может заинтересовать
P4KE27CAHR1G
P4KE27CAHR1G
Taiwan Semiconductor Corporation
TVS DIODE 23.1VWM 37.5VC DO204AL
SMCJ110AHR7G
SMCJ110AHR7G
Taiwan Semiconductor Corporation
TVS DIODE 110VWM 177VC DO214AB
1.5KE150AHB0G
1.5KE150AHB0G
Taiwan Semiconductor Corporation
TVS DIODE 128VWM 207VC DO201
PGSMAJ18A E2G
PGSMAJ18A E2G
Taiwan Semiconductor Corporation
TVS DIODE 18VWM 29.2VC DO214AC
SMCJ78 R7G
SMCJ78 R7G
Taiwan Semiconductor Corporation
TVS DIODE 1500W DO214AB SMC
SMDJ28A M6
SMDJ28A M6
Taiwan Semiconductor Corporation
TVS DIODE 3000W DO214AB SMC
BAV20WS RRG
BAV20WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 200MA SOD323
F1T7GH
F1T7GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A TS-1
SS36LHMHG
SS36LHMHG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 3A SUB SMA
BZD17C24P RHG
BZD17C24P RHG
Taiwan Semiconductor Corporation
DIODE ZENER 24V 800MW SUB SMA
1M150Z B0G
1M150Z B0G
Taiwan Semiconductor Corporation
DIODE ZENER 150V 1W DO204AL
TS3810CXG RFG
TS3810CXG RFG
Taiwan Semiconductor Corporation
IC SUPERVISOR 1 CHANNEL SOT23