TS8P06GH

TS8P06GH

Images are for reference only
See Product Specifications

TS8P06GH
Описание:
BRIDGE RECT 1PHASE 800V 8A TS-6P
Упаковка:
Tube
Datasheet:
TS8P06GH Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:TS8P06GH
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Bridge Rectifiers
Производитель:Taiwan Semiconductor Corporation
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:04d59a4f67a72cfc8a6f8046b91ff693
Technology:eb6d8ae6f20283755b339c0dc273988b
Voltage - Peak Reverse (Max):faca79d8bea430c6302af6f2e2f59d12
Current - Average Rectified (Io):f8cc56260823e63e891e80728bae51e6
Voltage - Forward (Vf) (Max) @ If:c861b5210be6b6a8997117f01b10bef7
Current - Reverse Leakage @ Vr:8f69ba4025902c0d85e983ab66d2be80
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:dbd5e4054ddf585ddd07117502897aa0
Supplier Device Package:dd9e42ac98abbecc8f441048cf414e60
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
TBS610
TBS610
Taiwan Semiconductor Corporation
6A 1000V STANDARD BRIDGE RECTIFI
RBV3506
RBV3506
EIC SEMICONDUCTOR INC.
BRIGDE RECTIFIER 35A 600V, CASE
VS-GBPC3510W
VS-GBPC3510W
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1P 1KV 35A GBPC-W
M50100TB1000
M50100TB1000
Sensata-Crydom
BRIDGE RECT 3P 1KV 100A MODULE
KBU1001
KBU1001
GeneSiC Semiconductor
BRIDGE RECT 1PHASE 100V 10A KBU
GBPC5010T
GBPC5010T
GeneSiC Semiconductor
BRIDGE RECT 1PHASE 1KV 50A GBPC
RS401M
RS401M
Rectron USA
BRIDGE RECT GLASS 50V 4A RS-4M
GBPC3510W-A1-0000
GBPC3510W-A1-0000
Yangzhou Yangjie Electronic Technology Co.,Ltd
RECT BRIDGE 1000V 35A GBPCW-G
BU1010A5S-E3/45
BU1010A5S-E3/45
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1P 1KV 3A BU-5S
BU20085S-E3/45
BU20085S-E3/45
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1P 800V 3.5A BU-5S
GBPC2504W T0G
GBPC2504W T0G
Taiwan Semiconductor Corporation
BRIDGE RECT 1P 400V 25A GBPC-W
GBU6JL-5000E3/51
GBU6JL-5000E3/51
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 600V 3.8A GBU
Вас также может заинтересовать
TESD5V0V4UCX6 RFG
TESD5V0V4UCX6 RFG
Taiwan Semiconductor Corporation
TVS DIODE 5VWM 15VC SOT26
SMBJ7V0CA
SMBJ7V0CA
Taiwan Semiconductor Corporation
TVS DIODE 7VWM 12VC DO214AA
P4KE180CA R1G
P4KE180CA R1G
Taiwan Semiconductor Corporation
TVS DIODE 154VWM 246VC DO204AL
SMCJ20CAHM6G
SMCJ20CAHM6G
Taiwan Semiconductor Corporation
TVS DIODE 20VWM 32.4VC DO214AB
P6SMB180CAHR5G
P6SMB180CAHR5G
Taiwan Semiconductor Corporation
TVS DIODE 154VWM 246VC DO214AA
SMDJ45CAHR7G
SMDJ45CAHR7G
Taiwan Semiconductor Corporation
TVS DIODE 45VWM 72.7VC DO214AB
SMCJ48C M6G
SMCJ48C M6G
Taiwan Semiconductor Corporation
TVS DIODE 1500W DO214AB SMC
1.5SMC11C M6G
1.5SMC11C M6G
Taiwan Semiconductor Corporation
TVS DIODE 1500W DO214AB SMC
DBLS201GHRDG
DBLS201GHRDG
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 50V 2A DBLS
GBU801 D2G
GBU801 D2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 50V 8A GBU
SR2030PTHC0G
SR2030PTHC0G
Taiwan Semiconductor Corporation
DIODE ARRAY GP 30V 20A TO247AD
ESH3C R6
ESH3C R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB